Surface chemistry and transport effects in GaN hydride vapor phase epitaxy

Segal, A.S.; Kondratyev, A.V.; Karpov, S. Yu.; Martin, D.; Wagner, Volker; Ilegems, M.

doi:10.1016/j.jcrysgro.2004.07.018

Cited by 38 publications

(32 citation statements)

References 26 publications

(38 reference statements)

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“…Specific feature of the model is provided by the quasi-thermodynamic description of surface chemical reactions on the Al/Ga metal surfaces and AlN/AlGaN crystal surfaces. As it was shown in [10], at the operating temperature of 800-900 o C, HCl dominantly converts into GaCl on the Ga surface, following reaction…”

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confidence: 89%

“…The surface kinetics is described within the quasithermodynamic approach that was earlier successfully applied to study GaN HVPE (Ref. [10]). The model is implemented within new editions of professional software packages HEpiGaNS TM and CVDSim TM (see http://www.str-soft.com), validated using literature experimental data, and then applied to modeling analysis of the technologies.…”

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confidence: 99%

“…Quasi-thermodynamic description of surface kinetics with reaction (R1) is presented in detail in [10], surface kinetics with reactions (R2) and (R3) is described quite similarly. Group-III chlorides generated in reaction (R1)-(R3) are transported to the substrate and interact there with NH 3 to produce GaN and AlN constituents of the AlGaN alloy…”

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confidence: 99%

“…(1)- (4) are supplemented by the conventional stoichiometric relations between the interface species fluxes (Ref. [10]) and expressions for the activities following the regular solution approximation (Ref. [11]).…”

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confidence: 99%

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Modeling analysis of AlN and AlGaN HVPE

Segal¹,

Bazarevskiy²,

Богданов³

et al. 2009

Phys. Status Solidi (c)

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Comprehensive model of AlN and AlGaN HVPE is developed. The model combines detailed description of the transport processes and quasi‐thermodynamic model of surface kinetics at the Al/Ga metal surfaces and AlN/AlGaN crystal surfaces. It is shown with the model that HCl dominantly converts into trichloride AlCl3 in the Al source but into monochloride GaCl in the Ga source. Then, AlN grows from AlCl3 under essentially non‐equilibrium conditions while GaN – from GaCl under near‐equilibrium conditions. The revealed differences between the AlN and GaN growth features explain many experimentally observed phenomena, including a sharp saturated behavior of the AlN growth rate in variation of the precursors flow rates and a strong effect of carrier H2 on the AlGaN composition. Generally, the model predicts a high sensitivity of the AlGaN composition to variation of the species flow rates due to their effect on the Ga incorporation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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confidence: 89%

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confidence: 99%

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confidence: 99%

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confidence: 99%

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Modeling analysis of AlN and AlGaN HVPE

Segal¹,

Bazarevskiy²,

Богданов³

et al. 2009

Phys. Status Solidi (c)

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show abstract

“…The latter was earlier applied to the modelling of other growth techniques (see, for example, (Segal et al, 2004) and references therein). As applied to AlN sublimation growth, it utilizes the extended Hertz-Knudsen relationships (Segal et al, 1999) for two reactive gaseous species, Al and N 2 Here, J i are the interface molar fluxes, α i (T) are the temperature-dependent sticking probabilities,…”

Section: Boundary Conditionsmentioning

confidence: 99%