Development of 2" AlN Substrates Using SiC Seeds

Avdeev, O.V.; Chemekova, T. Yu.; Мохов, Е. Н.; Nagalyuk, S. S.; Helava, H.; Ramm, M.G.; Segal, A.S.; Zhmakin, Alexander I.; Makarov, Yu.N.

doi:10.5772/29853

Cited by 5 publications

(5 citation statements)

References 271 publications

(296 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similar crystals were used by us as seeds for growth of long AlN ingots. First, the SiC seed was removed and the remaining AlN crystal was fixed to a TaC plate by special glue and then it was located in a crucible for continuation of further growth of the AlN ingot [12].…”

Section: Contributed Articlementioning

confidence: 99%

Specific features of sublimation growth of bulk AlN crystals on SiC wafers

Мохов

Izmaylova

Kazarova

et al. 2013

Phys. Status Solidi C

Self Cite

View full text Add to dashboard Cite

The features of 2” AlN bulk crystal growth by the sublimation sandwich method (SSM) on SiC seeds in a graphite‐heated reactor are investigated. AlN growth conditions and crystal properties are compared with the results of SiC sublimation growth in the same reactor. The specifics of AlN sublimation growth, including insufficient reproducibility of results, are believed to be caused by the low sticking coefficient of molecular nitrogen and the high reactivity of Al vapors. The formation of pores in the AlN crystal is explained by selective sublimation etching of the growing surface. The negative effect of non‐optimal growth conditions and impurities on AlN crystal quality is discussed. The analysis of container materials, inert to Al vapors was carried out. Various types of TaC crucibles suitable for growth of bulk AlN crystals on SiC seeds were developed. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Section: Contributed Articlementioning

confidence: 99%

Specific features of sublimation growth of bulk AlN crystals on SiC wafers

Мохов

Izmaylova

Kazarova

et al. 2013

Phys. Status Solidi C

Self Cite

View full text Add to dashboard Cite

show abstract

“…Growth process was performed in a TaC crucible using an apparatus for AlN crystal growth by PVT [16]. The vapor source polycrystalline AlN was placed at the bottom of the crucible and then annealed in vacuum for 20 h, with the annealing temperature 1700 • C. A substrate was fixed on a TaC substrate holder on the top of the crucible.…”

Section: Methodsmentioning

confidence: 99%

Distribution of Dislocations near the Interface in AlN Crystals Grown on Evaporated SiC Substrates

Argunova

Gutkin

et al. 2017

Crystals

View full text Add to dashboard Cite

Abstract:To exploit unique properties of thin films of group III-nitride semiconductors, the production of native substrates is to be developed. The best choice would be AlN; however, presently available templates on sapphire or SiC substrates are defective. The quality of AlN could be improved by eliminating the substrate during the layer growth. In this paper, we demonstrate freestanding AlN layers fabricated by an SiC substrate evaporation method. Such layers were used to investigate dislocation structures near the former AlN-SiC interface. Specimens were characterized by synchrotron radiation imaging, triple-axis diffractometry and transmission electron microscopy (TEM). We found that the evaporation process under non-optimal conditions affected the dislocation structure. When the growth had been optimized, AlN layers showed a uniform distribution of dislocations. The dislocations tended to constitute low-angle subgrain boundaries, which produced out-of-plane and in-plane tilt angles of about 2-3 arc-min. Similar broadening was observed in both symmetric and asymmetric rocking curves, which proved the presence of edge, screws as well as mixed dislocation content. TEM revealed arrays of edge threading dislocations, but their predominance over the other threading dislocations was not supported by present study. To explain the experimental observations, a theoretical model of the dislocation structure formation is proposed.

show abstract

“…Growth of high-quality crystals and epitaxial layers (EL) is possible in vacuum and in gas phase environment. SSM is successfully used for growth of SiC bulk crystals [13] and epitaxial layers [14] and also growth of GaN [15] and AlN [16] crystals. Schematic view of the sublimation sandwich system for growth of the doped SiC crystals.…”

Section: Sic Doping During Sublimation Growthmentioning

confidence: 99%

Doping of SiC Crystals during Sublimation Growth and Diffusion

Мохов¹

2019

Crystal Growth

View full text Add to dashboard Cite

The preparation of SiC crystals doped with various impurities introduced during the process of sublimation growth and diffusion is described. The growth of SiC crystals was carried out by a sublimation-sandwich method, proposed by us in 1970. Crystals of the n-and p-type conductivity with maximum content of electrically active impurities (of the order of 10 21 cm −3) were obtained. The solubility values of more than 15 impurities were determined. Special tantalum containers with several temperature zones, allowing to introduce any impurity into SiC practically, are developed. The dependences of the impurities concentration on the temperature, growth rate and seed orientation are found. Diffusion of impurities of boron, aluminum, gallium, beryllium, lithium, nitrogen and phosphorus in silicon carbide polytypes was studied. Diffusion coefficients of these impurities in a wide temperature range are determined. It is shown that for a number of impurities diffusion cannot be described by standard distributions that are explained by the presence of several states of diffusing centers. Fast-diffusing states are atoms located in interstices, as well as centers, including the impurity atom and point defect. The extremely low diffusion mobility of lattice point atoms in the SIC lattice is noted.

show abstract

Development of 2" AlN Substrates Using SiC Seeds

Cited by 5 publications

References 271 publications

Specific features of sublimation growth of bulk AlN crystals on SiC wafers

Specific features of sublimation growth of bulk AlN crystals on SiC wafers

Distribution of Dislocations near the Interface in AlN Crystals Grown on Evaporated SiC Substrates

Doping of SiC Crystals during Sublimation Growth and Diffusion

Contact Info

Product

Resources

About