Surface Charges in a Zinc‐Borosilicate Glass/Silicon System

Abstract

Surface charges in a zinc-borosilicate glass/silicon system were studied by measuring capacitance-voltage curves of metal-glass-silicon capacitors at various temperatures. The capacitance-voltage curves change remarkably with measurement frequency and temperature. The density of positive fixed charge decreases significantly with increasing glass firing temperature and also when nitrogen gas is added to the oxygen firing atmosphere. On the other hand, the density of the surface state is about (2-6) • 1012 cm -2 9 eV -1 and insensitive to glass firing conditions. The surface charge is positive for n-type silicon and negative for p-type silicon when the Fermi level is near the intrinsic energy level. The surface charges are reversed, however, when the Fermi level is near the bandedge.

Effects of Bi2O3 and Na2O on the Thermal and Dielectric Properties of Zinc Borosilicate Glass for Plasma Display Panels

“…In this regard, another candidate, ZnO–B 2 O 3 –SiO 2 (ZBS), has attracted interest, as it was originally developed for low melting glasses for various applications such as thick‐film microelectronics applications, 8–12 optical glasses, 13–17 and microwave dielectric ceramics 18 . Dymant et al 8 .…”

“…were interested in the SiO 2 –B 2 O 3 ‐rich ZBS–Bi 2 O 3 composition region where they systematically investigated the influence of the Bi 2 O 3 /ZnO ratio on T g and CTE but dielectric properties were not reported. On the other hand, as most of the optoelectronic and microwave applications have been based on ZnO–B 2 O 3 ‐rich ZBS compositions (ZnO takes 50–60 mol%, and ZnO plus B 2 O 3 takes 80–100 mol%), 9–18 more chance of reliability verification has been given to the high ZnO–B 2 O 3 region. In light of Wu and Huang, 18 the ZnO–B 2 O 3 ‐rich ZBS possesses a dilatometric softening point T d of 580°–600°C and a dielectric constant K in the range 6.88–7.56.…”