Surface-charge lithography for GaN microstructuring based on photoelectrochemical etching techniques

Tiginyanu, I. M.; Popa, V.; Volciuc, O.

doi:10.1063/1.1919393

Cited by 31 publications

(30 citation statements)

References 13 publications

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“…These nanocolumns represent whiskers related to threading dislocations. As it was shown previously [10,13], threading dislocations in GaN are negatively charged and, under relevant conditions, this charge makes them resistant to PEC etching. The results of technological exploration demonstrate the validity of the proposed technological route.…”

Section: Resultsmentioning

confidence: 51%

Ultra-thin semiconductor membrane nanotechnology based on surface charge lithography

2011

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We show that by subjecting GaN epilayers on sapphire substrates to low-energy/low-dose ion treatment with subsequent photoelectrochemical etching it is possible to fabricate ultra-thin GaN membranes in the form of nano-roof hanging over networks of whiskers representing threading dislocations. The suspended membranes prove to be transparent to both UV-radiation and keV-energy electrons, their architecture being dependent upon the stirring conditions of the electrolyte during electrochemical etching. The obtained results are indicative of electrical conductivity, flexibility and excellent mechanical stability of ultra-thin GaN membranes characterized by prevailing yellow cathodoluminescence.

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Section: Resultsmentioning

confidence: 51%

Ultra-thin semiconductor membrane nanotechnology based on surface charge lithography

2011

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“…9 We have previously shown that SCL followed by PEC etching enables the controlled production of ultra thin continuous suspended membranes of GaN. 5, 10 We have recently extended this method to allow for the controlled fabrication of suspended ultra-thin GaN membranes of predetermined dimensions with supporting structures. 6 SCL is a maskless approach, which involves direct writing on the sample surface by low-energy ions.…”

Section: Methodsmentioning

confidence: 99%

Cathodoluminescence characterization of suspended GaN nanomembranes

Stevens‐Kalceff

Tiginyanu

Popa

et al. 2013

Journal of Applied Physics

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Continuous suspended ∼15 nm thick gallium nitride (GaN) nano-membranes have been investigated using cathodoluminescence microanalysis. The GaN nanomembranes are fabricated by focused ion beam (FIB) pre-treatment of GaN epilayer surfaces followed by photoelectrochemical (PEC) etching. CL microanalysis enables high sensitivity, nanoscale spatial resolution detection of impurities, and defects, and is associated with key features of the suspended GaN nano-membranes. CL spectra and images of the suspended nano-membranes reveal the broad emission band at ∼2.2 eV which is associated with deep acceptor states and the near edge emission at ∼3.4 eV which is associated with free exciton transitions at 295 K. The near edge emission can be resolved into two components, one associated with emission from the nanomembrane and the other associated with CL from underlying GaN transmitted through the nanomembrane. CL spectroscopy gives insight into the physical properties and optical quality of the suspended GaN nano-membranes. Blue shift of the CL near band edge emission indicates that the suspended GaN nanomembranes exhibit the combined effects of quantum confinement and strain.

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“…Another approach for manufacturing nanostructured GaN membranes is based on the so-called surface charge lithography (SCL) [31], which implies low-dose low-energy ion-beam treatment of the GaN surface followed by closed-circuit photoelectrochemical (PEC) etching in aqueous solution of KOH under UV excitation. Low-dose low-energy ion-beam treatment induces a negative charge on the semiconductor surface, which shields the material against subsequent PEC etching.…”

Section: Technologies Applied For the Fabrication Of Gan Membrane Strmentioning

confidence: 99%

GaN nanostructuring for the fabrication of thin membranes and emerging applications

Tiginyanu¹,

Ursaki²

2014

Turk J Phys

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Abstract:We present a review of technological methods developed in recent years for the purpose of gallium nitride nanostructuring, with the main focus on fabrication of thin GaN membranes. In particular, we report on traditional methods of wet etching undercutting for membrane manufacturing, technologies applied for the fabrication of photonic crystal structures based on GaN nanomembranes, double side processing, and surface charge lithography. Prospects of membrane applications in photonic devices, sensors, and microoptoelectromechanical and nanoelectromechanical systems are discussed, taking into account the advantageous piezoelectric, optical, and mechanical properties of GaN and related III-V nitride materials.

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Surface-charge lithography for GaN microstructuring based on photoelectrochemical etching techniques

Abstract: Cathodoluminescence microscopy and spectroscopy of GaN epilayers microstructured using surface charge lithography

Cited by 31 publications

References 13 publications

Ultra-thin semiconductor membrane nanotechnology based on surface charge lithography

Ultra-thin semiconductor membrane nanotechnology based on surface charge lithography

Cathodoluminescence characterization of suspended GaN nanomembranes

GaN nanostructuring for the fabrication of thin membranes and emerging applications

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