Surface characterization of ultrathin La0.75Sr0.25MnO3 epitaxial films on SrTiO3 substrate

Effects of annealing on structure and composition of LSMO thin films

“…829.2 eV (La3), 127.0 eV (Sr3), 636.1 eV (Mn3), and 525.5 eV (O4) and the corresponding normalization intensity is increasing from 1023 to 1073 K. Furthermore, their binding energies are lower than all previous reported [29,31,32,[37][38][39]. They may come form a new metastable ingredient with semiconductor or insulator-like properties.…”

Influence of alkylphosphonic acid grafting on the electronic and magnetic properties of La2/3Sr1/3MnO3 surfaces

“…Hence we cannot extract accurate information on the evolution of manganese oxidation state from Mn 3s. We now focus on the Mn 2p spectra recorded for a bare LSMO surface and LSMO/DPA samples (Figure 1 A c c e p t e d M a n u s c r i p t 643 eV is associated to Mn 4+ [17,18,19]. After DPA grafting the amplitude of the curve at 643 eV slightly decreases indicating a weaker contribution of Mn 4+ ions whereas the Mn 3+ contribution is almost constant.…”

Near-room-temperature control of magnetization in field effect devices based on La0.67Sr0.33MnO3 thin films

“…In addition we must take into account the formation of the so called "dead layer" at the interface between manganite films and substrates, 10,17,18 determined to be in the order of 3 nm in our films by resistivity and nuclear magnetic resonance measurements, 12,14 which further reduces the thickness of the film with nominal magnetic properties. According to these constraints, we analyzed FEDs with LSMO thickness between 2 and 4 nm, in order to find for each configuration the minimum thickness giving a reasonable MOKE signal to be monitored as a function of the applied electric field.…”

“…1. This is not a merely geometrical difference, by virtue of the intrinsic vertical inhomogeneity of thin manganite films related to the formation of a dead layer, 2-3 nm thick, at the interface with oxide substrates, 10,17,18 which is differently located with respect to the layer perturbed by the electric field in back-and top-gated FEDs ͑see Fig. 1͒.…”