Surface characterisation of strontium-bismuth tantalate (SBT) thin films

Hartmann, Andreas; Lamb, Robert N.; Scott, J. F.; Johnston, Peter; Bouanani, M. El; Chen, C. W.; Robertson, John

doi:10.1080/10584589908210144

Cited by 6 publications

(5 citation statements)

References 29 publications

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“…The dielectric constant of p‐type SrTiO 3 is ε r = 150 and the simulation temperature is T = 500 K. The effective density of states of the conduction band ( N c ) and valance band ( N v ) are estimated to be 10 21 cm −3 based on literature . The energy of the conduction band minimum ( E c ) and that of the valence band maximum ( E v ) of SrTiO 3 are set to be −4.0 and −7.2 eV, respectively, resulting in a band gap of 3.2 eV . The SrTiO 3 thin film is assumed to be acceptor‐doped with its Fermi level (

E_{f}^{STO}

) around −6.1 eV.…”

Section: Resultsmentioning

confidence: 99%

Computational modeling of grain boundary electrostatic effect in polycrystalline SrTiO₃ thin film

2019

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Understanding the leakage current caused by charge transport and local accumulation in dielectric oxides is critical for predicting and extending the lifetime of dielectric-based electronic devices. The internal interfaces such as grain boundaries (GBs) inside a dielectric induce local strain and charge segregation and thus further influence the charge transport behavior. In this work, we employ computational modeling based on the Schottky barrier model and nonlinear Nernst-Planck transport equation is used to study the oxygen vacancy transport and leakage current evolution in a SrTiO 3 thin film under a DC bias with planar electrodes. It is found that in polycrystalline SrTiO 3 , the GB-bounded donors create an electric potential barrier and a local depletion region near the GBs, impeding the oxygen vacancy transport and suppressing the leakage current increase compared to a single crystal SrTiO 3 thin film. The effects of temperature, the magnitude of an applied field, the number density of GBs, the GB-bounded donor concentration, and the depletion layer width on the leakage current evolution are systematically investigated. The simulation results are compared with the analytical solutions, as well as with existing theoretical and experimental reports. This work thus helps shed light to the grain-structure dependent electrostatic behaviors in dielectric thin films under different intrinsic and extrinsic conditions.

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E_{f}^{STO}

) around −6.1 eV.…”

Section: Resultsmentioning

confidence: 99%

Computational modeling of grain boundary electrostatic effect in polycrystalline SrTiO₃ thin film

2019

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“…52 The XPS depth profiling data, however, indicate that bismuth diffuses into the electrode material. The diffusion of bismuth reduces the effective work function of the electrode material, which also results in increased leakage currents.…”

Section: Electronic Properties Of Ferroelectric Films and Interfacesmentioning

confidence: 97%

“…The main peaks are centred at 158.9 and 164.2 eV and are related to Bi 3C , whereas the smaller peaks at 156.6 and 162.0 eV are related to metallic bismuth. 54 For detection of the spectrum shown in Fig. 12(b) the photoelectron take-off angle was reduced to 30°, which increased the surface sensitivity significantly compared to that of the measurement shown in Fig.…”

Section: Electronic Properties Of Ferroelectric Films and Interfacesmentioning

confidence: 97%

“…51 It is expected that O 2p, Ta 5d, 6s and Bi 2p states in particular are involved in the formation of the conduction band. 51,52 According to the dipole selection rules, these empty states can be probed by tuning x-rays provided by a synchrotron so that O 1s, Ta 4p and Bi 4d core-level photoelectrons are being excited into the corresponding empty states just above the Fermi level. These NEXAFS studies were performed with a resolution of ¾0.1 eV in total-electron-yield mode (solid lines) simultaneously by detecting fluorescence photons (dashed lines).…”

Section: Electronic Properties Of Ferroelectric Films and Interfacesmentioning

confidence: 99%

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Chemical and structural characterization of thin films using electrons and photons

Hartmann

Lamb

2000

Surf. Interface Anal.

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“…This value is in very good agreement with that reported in literature. 17 For short delay time (1 s) the steady state cannot be reached, the photocurrent is in a transitory state and its value can be in¯uenced by the elements mentioned above. All these can a ect the wavelength at which the maximum in the spectral distribution occurs.…”

Section: Discussionmentioning

confidence: 99%

Photoconductivity of SrBi2Ta2O9 thin films

Pintilie

Alexe

1999

Journal of the European Ceramic Society

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Photoconductive properties of SrBi 2 Ta 2 O 9 thin ®lms in the 250±400 nm wavelength range were investigated. The ®lms were deposited on Pt/SiO 2 /Si substrates using the Chemical Solution Deposition and were crystallized by conventional thermal annealing at 850 C. One sensitivity maximum was observed in the spectral distribution of the photoconductive signal and was attributed to band-to-band generation in the ®lm. The wavelength corresponding to this maximum was found to be dependent on the applied voltage, on the delay time, de®ned as the time between the application of light on the ®lm and the reading of the generated photocurrent, and on the wavelengths sweeping direction (up or down). The gap value was estimated to be around 3 . 94±4 eV. #

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Surface characterisation of strontium-bismuth tantalate (SBT) thin films

Cited by 6 publications

References 29 publications

Computational modeling of grain boundary electrostatic effect in polycrystalline SrTiO₃ thin film

Computational modeling of grain boundary electrostatic effect in polycrystalline SrTiO₃ thin film

Chemical and structural characterization of thin films using electrons and photons

Photoconductivity of SrBi2Ta2O9 thin films

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Surface characterisation of strontium-bismuth tantalate (SBT) thin films

Cited by 6 publications

References 29 publications

Computational modeling of grain boundary electrostatic effect in polycrystalline SrTiO3 thin film

Computational modeling of grain boundary electrostatic effect in polycrystalline SrTiO3 thin film

Chemical and structural characterization of thin films using electrons and photons

Photoconductivity of SrBi2Ta2O9 thin films

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Product

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Computational modeling of grain boundary electrostatic effect in polycrystalline SrTiO₃ thin film

Computational modeling of grain boundary electrostatic effect in polycrystalline SrTiO₃ thin film