Surface and thickness effect on the ferroelectric, dielectric and pyroelectric properties of Mn-doped Pb(Mg1/3Nb2/3)O3–0.28PbTiO3 single crystals

Zhao, Jing; Zhu, Rongfeng; Du, Qiuxiang; Liu, Fei; Wu, Yang; Lin, Di; Xu, Hu; Di, Wenning; Chen, Jianwei; Luo, Haosu

doi:10.1016/j.jallcom.2019.152500

Cited by 8 publications

(8 citation statements)

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“…[39] Both the ferroelectric and pyroelectric properties of Mn-doped Pb(Mg 1/3 Nb 2/3 )O 3 -0.28PbTiO 3 (PMN-0.28PT) single crystal were studied, and the thickness of crystal sample will directly influence the pyroelectric property. [40] As presented in Figure 3d, it is found that the smaller the sample thickness, the greater the influence of surface structure on the pyroelectric performance. With the increase of thickness from 16 to 400 µm, for the sample treated by chemical mechanical polishing, the pyroelectric coefficient increases obviously by over 300%, while the pyroelectric coefficient increases by ≈16% for mechanical lapping treated sample.…”

Section: Single Crystalsmentioning

confidence: 82%

Recent Advances in Pyroelectric Materials and Applications

Ding

Bowen

et al. 2021

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As one important subclass of piezoelectric materials, pyroelectric materials have caused increasing attention owing to the unique pyroelectric effect induced by spontaneous polarization, showing broad promising application prospects due to various electrical responses induced by time‐dependent temperature variation. This review systematically introduces the pyroelectric effect and evaluation of pyroelectric materials and follows by analyzing and concluding the novel properties corresponding to four kinds of main pyroelectric materials. The emphasis of this review focuses on several significant and practical applications of pyroelectric materials in thermal energy harvesting from the external environment, pyroelectric sensing, and imaging, even some electrochemical applications including hydrogen generation, wastewater treatment, sterilization, and disinfection. Finally, the development direction of pyroelectric materials, potential challenges and opportunities in the future are all discussed and proposed. Through systematical conclusion and analysis of the latest research progress in the recent two decades, this review may provide significant guide and inspiration in the development of pyroelectric materials.

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Section: Single Crystalsmentioning

confidence: 82%

Recent Advances in Pyroelectric Materials and Applications

Ding

Bowen

et al. 2021

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111

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“…From Figure 7, with the Figure 7 displays the dielectric properties (ε r and tanδ measured at 1 kHz after poling) and pyroelectric properties (p, F i , F v and F d ) of the thin Mn:PIMNT pyroelectric chips annealed at different temperatures. Note that the electrical properties of the thin Mn:PIMNT pyroelectric chips are slightly different from those of the thick Mn:PIMNT crystals, which is related to the size effect and the surface effect [42][43][44][45][46][47]. The slightly higher pyroelectric coefficient of the thin Mn:PIMNT pyroelectric chips can be attributed to the measurement characteristic of the dynamic method, which measures the temperature change of the samples by measuring that of the sample stage.…”

Section: } {mentioning

confidence: 98%

“…For the thick Mn:PIMNT crystals, the actual temperature change is lower than the measured temperature change due to the thickness, meaning that the obtained pyroelectric coefficient is relatively lower than the actual value. The slightly lower εr and higher tanδ are the result of the interaction of the surface damage layer and surface stress, which can be ignored in thick Mn:PIMNT crystals [43,45]. From Figure 7, with the Figure 7 displays the dielectric properties (ε r and tanδ measured at 1 kHz after poling) and pyroelectric properties (p, F i , F v and F d ) of the thin Mn:PIMNT pyroelectric chips annealed at different temperatures.…”

Section: } {mentioning

confidence: 99%

“…The slightly lower ε r and higher tanδ are the result of the interaction of the surface damage layer and surface stress, which can be ignored in thick Mn:PIMNT crystals [43,45]. From Figure 7, with the increase in the annealing temperature, the pyroelectric properties (p, F i , F v and F d ) of the Mn:PIMNT pyroelectric chips firstly improve, then decline, and the 500 • C annealing samples exhibit the best pyroelectric properties, with p = 10.60 × 10 −4 Cm −2 K −1 , ε r = 451, tanδ = 0.233%, F i = 4.23 mV −1 , F v = 0.106 m 2 C −1 and F d = 9.99 Pa −1/2 .…”

Section: } {mentioning

confidence: 99%

“…For the thin Mn:PIMNT chips, the surface stress generated by the thinning and polishing process will pull the [111]-oriented domains perpendicular to the surface to the horizontal direction of the surface, resulting in the diminution of pyroelectric performance, which can be eliminated by the annealing process [43]. However, the increased roughness induced by the thermal etching feature of the annealing process will cause the pyroelectric performance of the thin Mn:PIMNT chips to deteriorate [34,43]. It can be seen that the pyroelectric properties of the Mn:PIMNT pyroelectric chips annealed at 800 • C decline suddenly due to the sharply increased surface roughness (RMS = 37.08 nm, Figure 6d).…”

Section: } {mentioning

confidence: 99%

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A Two-Step Annealing Method to Enhance the Pyroelectric Properties of Mn:PIMNT Chips for Infrared Detectors

et al. 2020

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Mn:0.15Pb(In1/2Nb1/2)O3-0.55Pb(Mg1/3Nb2/3)O3-0.30PbTiO3 (Mn:PIMNT) pyroelectric chips were prepared by a two-step annealing method. For the two steps, annealing temperatures dependence of microstructure, defects, surface stress, surface roughness, dielectric properties and pyroelectric properties were studied comprehensively. The controlling factors influencing the pyroelectric properties of the Mn:PIMNT crystals were analyzed and the optimum annealing temperature ranges for the two steps were determined: 600–700 °C for the first step and 500–600 °C for the second step. The pyroelectric properties of the thin Mn:PIMNT chips were significantly enhanced by the two-step annealing method via tuning oxygen vacancies and eliminating surface stress. Based on Mn:PIMNT pyroelectric chips annealed at the most favorable conditions (annealed at 600 °C for the first step and 500 °C for the second step), infrared detectors were prepared with specific detectivity D* = 1.63 × 109 cmHz1/2W−1, nearly three times higher than in commercial LiTaO3 detectors.

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