Surface and subsurface deformation characteristics of cemented tungsten carbide under nanoscratching

Irwan, Rudy; Huang, Han

doi:10.1504/ijsurfse.2013.053698

Cited by 2 publications

(1 citation statement)

References 15 publications

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“…Huang et al [8] studied surface and subsurface deformation characteristics during nanoscratching of cemented carbide and showed that smooth surfaces were produced at loads less than 3mN.When larger loads are applied, debris, fractured and crushed particles were generated. Li et al [9] systematically studied the effect of strain rate on surface deformation characteristics and surface damage by conducting nanoscratch tests with different scratch speeds on Lu2O3 single crystals.…”

Section: Introductionmentioning

confidence: 99%

EHTT2022-Material removal characteristics of single crystal 4H-SiC based on varied-load nanoscratch tests

Tang

Mao

et al. 2022

Preprint

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The single crystal silicon carbides (SiC) have been widely applied in the extreme circumstances and conditions for their excellent physical and chemical properties. In order to obtain various components with high surface integrity and low surface damage, precision and ultra-precision machining methods were used to process single crystal SiC. However, as typical hard-to-machine materials, their good mechanical properties also resulted in the surface defects and subsurface damage. For improving the machining quality and prolonging the service life of components, the varied-load nanoscratch tests were systematically performed on single crystal 4H-SiC by a nanoindenter system with Berkovich indenter in this paper. The characteristics of material removal under different plane, indenter direction, normal loading rate and scratch interval were discussed. The surface morphology of nanoscratch grooves, the distribution of cracks, material deformations and fractures, and cross-section characteristics were analyzed by SEM and 3D profilometer. The mechanism of material removal and crack propagation of single crystal 4H-SiC were also studied. The results indicated that the Si-plane of single crystal 4H-SiC and indenter direction of edge forward were more suitable for material removal and machining. The normal loading rate had little effect on scratch depth, but the lower one would increase the ductile region and critical depth of transition. The increasing of scratch interval would postpone the greater fluctuation of depth-distance curves of second scratch, and curve changes showed high coincidence gradually. In addition, the propagation and interaction of radial, median and transverse cracks resulted in the material fractures and accumulation of chips. The proposed research provides the instruction to high efficiency and precision machining of single crystal SiC for the purpose of emission and carbon reduction.

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Section: Introductionmentioning

confidence: 99%

EHTT2022-Material removal characteristics of single crystal 4H-SiC based on varied-load nanoscratch tests

Tang

Mao

et al. 2022

Preprint

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Material Removal Characteristics of Single-Crystal 4H-SiC Based on Varied-Load Nanoscratch Tests

Tang,

Ou,

Mao

et al. 2023

Chin. J. Mech. Eng.

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Single-crystal silicon carbide (SiC) has been widely applied in the military and civil fields because of its excellent physical and chemical properties. However, as is typical in hard-to-machine materials, the good mechanical properties result in surface defects and subsurface damage during precision or ultraprecision machining. In this study, single- and double-varied-load nanoscratch tests were systematically performed on single-crystal 4H-SiC using a nanoindenter system with a Berkovich indenter. The material removal characteristics and cracks under different planes, indenter directions, normal loading rates, and scratch intervals were analyzed using SEM, FIB, and a 3D profilometer, and the mechanisms of material removal and crack propagation were studied. The results showed that the Si-plane of the single-crystal 4H-SiC and edge forward indenter direction are most suitable for material removal and machining. The normal loading rate had little effect on the scratch depth, but a lower loading rate increased the ductile region and critical depth of transition. Additionally, the crack interaction and fluctuation of the depth-distance curves of the second scratch weakened with an increase in the scratch interval, the status of scratches and chips changed, and the comprehensive effects of the propagation and interaction of the three cracks resulted in material fractures and chip accumulation. The calculated and experimental values of the median crack depth also showed good consistency and relativity. Therefore, this study provides an important reference for the high-efficiency and precision machining of single-crystal SiC to ensure high accuracy and a long service life.

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Surface and subsurface deformation characteristics of cemented tungsten carbide under nanoscratching

Cited by 2 publications

References 15 publications

EHTT2022-Material removal characteristics of single crystal 4H-SiC based on varied-load nanoscratch tests

EHTT2022-Material removal characteristics of single crystal 4H-SiC based on varied-load nanoscratch tests

Material Removal Characteristics of Single-Crystal 4H-SiC Based on Varied-Load Nanoscratch Tests

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