Material Removal Characteristics of Single-Crystal 4H-SiC Based on Varied-Load Nanoscratch Tests
Kun Tang,
Wangping Ou,
Cong Mao
et al.
Abstract:Single-crystal silicon carbide (SiC) has been widely applied in the military and civil fields because of its excellent physical and chemical properties. However, as is typical in hard-to-machine materials, the good mechanical properties result in surface defects and subsurface damage during precision or ultraprecision machining. In this study, single- and double-varied-load nanoscratch tests were systematically performed on single-crystal 4H-SiC using a nanoindenter system with a Berkovich indenter. The materi… Show more
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