Surface and gas sensing properties of nanocrystalline nickel oxide thin films

Soleimanpour, Amir M.; Jayatissa, Ahalapitiya H.; Суманасекера, Гамини

doi:10.1016/j.apsusc.2013.03.085

Cited by 98 publications

(33 citation statements)

References 45 publications

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“…Figure shows XRD patterns of as‐deposited and laser irradiated NiO x films. The polycrystalline nature of as‐deposited films is observed with (111), (200), and (220) reflections which is consistent with previous studies . Laser irradiation of 100 pulses introduces disorder, likely through defect formation and chemical bond rearrangement processes.…”

Section: Resultssupporting

confidence: 89%

Modification of reactively sputtered NiO_xthin films by pulsed UV laser irradiation

Itapu

Georgiev

Uprety

et al. 2016

Phys. Status Solidi A

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This work reports on the effect of ultraviolet (UV) laser irradiation on the structural, electrical, and optical properties of nickel oxide (NiOx) thin films, deposited by reactive sputtering of nickel in an oxygen containing atmosphere. It was found that the conduction type can be changed from p‐type to n‐type and the resistivity decreased as the number of laser pulses is increased and then increases again. The as‐deposited films are polycrystalline, while laser irradiation renders the films amorphous. The observed transition from O‐rich NiOx as‐deposited films to Ni‐rich laser‐irradiated NiOx can be significant to electrochromic, resistive switching, and other applications. The band gap of the as‐deposited and the laser irradiated NiOx films was obtained from spectroscopic ellipsometry measurements and was found to slightly increase upon laser irradiation. It is also observed that the surface roughness increases slightly. Aging effects or instabilities in the structure and composition of the films are also observed under normal conditions.

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Section: Resultssupporting

confidence: 89%

Modification of reactively sputtered NiO_xthin films by pulsed UV laser irradiation

Itapu

Georgiev

Uprety

et al. 2016

Phys. Status Solidi A

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“…As well as we know, the stoichiometric NiO crystal is an insulator, however, typical NiO exhibits a reasonable electrical conductivity due to nickel vacancies or interstitial oxygen atoms in NiO crystal (p-type semiconductor) [ 31 ]. As-synthesized Zn-doped NiO film exhibited oxygen-rich stoichiometry (see Fig.…”

Section: Resultsmentioning

confidence: 99%

Gas-Sensing Devices Based on Zn-Doped NiO Two-Dimensional Grainy Films with Fast Response and Recovery for Ammonia Molecule Detection

2015

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Zn-doped NiO two-dimensional grainy films on glass substrates are shown to be an ammonia-sensing material with excellent comprehensive performance, which could real-time detect and monitor ammonia (NH3) in the surrounding environment. The morphology and structure analysis indicated that the as-fabricated semiconductor films were composed of particles with diameters ranging from 80 to 160 nm, and each particle was composed of small crystalline grain with a narrow size about 20 nm, which was the face-centered cubic single crystal structure. X-ray diffraction peaks shifted toward lower angle, and the size of the lattice increased compared with undoped NiO, which demonstrated that zinc ions have been successfully doped into the NiO host structure. Simultaneously, we systematically investigated the gas-sensing properties of the Zn-doped NiO sensors for NH3 detection at room temperature. The sensor based on doped NiO sensing films gave four to nine times faster response and four to six times faster recovery speeds than those of sensor with undoped NiO films, which is important for the NiO sensor practical applications. Moreover, we found that the doped NiO sensors owned outstanding selectivity toward ammonia.

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“…NiO, one of a few p-type metal oxide semiconductors, has a large band gap varied between 3.6 to 4.0 eV [10]. In the stoichiometric structure, NiO has insulator property with resistivity of about 10 13 Ω cm [11], however non-stoichiometry resulted from Ni 2 þ vacancies and oxygen interstitials in NiO structure makes it a p-type semiconductor material [1,12].…”

Section: Introductionmentioning

confidence: 99%

Determination of certain sol-gel growth parameters of nickel oxide films

Turgut

Sönmez

Duman

2015

Ceramics International

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Surface and gas sensing properties of nanocrystalline nickel oxide thin films

Cited by 98 publications

References 45 publications

Modification of reactively sputtered NiO_xthin films by pulsed UV laser irradiation

Modification of reactively sputtered NiO_xthin films by pulsed UV laser irradiation

Gas-Sensing Devices Based on Zn-Doped NiO Two-Dimensional Grainy Films with Fast Response and Recovery for Ammonia Molecule Detection

Determination of certain sol-gel growth parameters of nickel oxide films

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Surface and gas sensing properties of nanocrystalline nickel oxide thin films

Cited by 98 publications

References 45 publications

Modification of reactively sputtered NiOxthin films by pulsed UV laser irradiation

Modification of reactively sputtered NiOxthin films by pulsed UV laser irradiation

Gas-Sensing Devices Based on Zn-Doped NiO Two-Dimensional Grainy Films with Fast Response and Recovery for Ammonia Molecule Detection

Determination of certain sol-gel growth parameters of nickel oxide films

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Modification of reactively sputtered NiO_xthin films by pulsed UV laser irradiation

Modification of reactively sputtered NiO_xthin films by pulsed UV laser irradiation