1991
DOI: 10.1007/3540534288_18
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Surface and depth analysis based on sputtering

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Cited by 25 publications
(3 citation statements)
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“…Sequential removal of surface layers exposes the bulk of the material, allowing the generation of depth profiles (composition versus depth) by continuous elemental analysis using any of the standard surface-analysis techniques such as low-energy ion-scattering spectroscopy, X-ray photoelectron spectroscopy or Auger electron spectroscopy. An excellent review of the topic is given by Wittmaack (1991).…”
Section: (B) Depth Profilingmentioning
confidence: 99%
“…Sequential removal of surface layers exposes the bulk of the material, allowing the generation of depth profiles (composition versus depth) by continuous elemental analysis using any of the standard surface-analysis techniques such as low-energy ion-scattering spectroscopy, X-ray photoelectron spectroscopy or Auger electron spectroscopy. An excellent review of the topic is given by Wittmaack (1991).…”
Section: (B) Depth Profilingmentioning
confidence: 99%
“…3 For cesium sputtering, the pre-steadystate region prior to steady state erosion is very dependent on the sample and instrument configuration. 4 If the primary ion etching is by an inert gas ion, the chemical nature of the surface layer is relatively unaltered apart from the physical effects such as ion-beam damage, preferential sputtering, enhanced diffusivity, etc., whether or not the inert gas atoms are incorporated into the matrix. 5 In this context, the use of gallium as a primary ion is very comparable to inert gas ions as secondary ion yields are not enhanced as with oxygen or cesium.…”
Section: Introductionmentioning
confidence: 99%
“…5 In this context, the use of gallium as a primary ion is very comparable to inert gas ions as secondary ion yields are not enhanced as with oxygen or cesium. 4…”
Section: Introductionmentioning
confidence: 99%