Sputtering: survey of observations and derived principles

Baragiola, R. A.

doi:10.1098/rsta.2003.1301

Cited by 58 publications

(21 citation statements)

References 107 publications

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“…Experimental kinetic sputtering studies of various oxides, minerals, lunar simulants, and lunar soils have also been reported in Nenadovic et al . [], Baragiola [], and references therein, and Dukes and Baragiolo [], focusing on mass loss measurements, analysis of secondary ion ejection, or ion impact‐induced X‐ray photoelectron spectroscopy (XPS) surface modification.…”

Section: Introductionmentioning

confidence: 99%

Kinetic and potential sputtering of an anorthite‐like glassy thin film

et al. 2017

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In this paper, we present measurements of He+ and He+2 ion‐induced sputtering of an anorthite‐like thin film at a fixed solar wind‐relevant impact energy of ~0.5 keV/amu using a quartz crystal microbalance approach (QCM) for determination of total absolute sputtering yields. He+2 ions are the most abundant multicharged ions in the solar wind, and increased sputtering by these ions in comparison to equivelocity He+ ions is expected to have the biggest effect on the overall sputtering efficiency of solar wind impact on the Moon. Our measurements indicate an almost 70% increase of the sputtering yield for doubly charged incident He ions compared to that for same velocity He+ impact (14.6 amu/ion for He+2 vs. 8.7 amu/ion for He+). Using a selective sputtering model, the new QCM results presented here, together with previously published results for Ar+q ions and SRIM results for the relevant kinetic‐sputtering yields, the effect due to multicharged‐solar‐wind‐ion impact on local near‐surface modification of lunar anorthite‐like soil is explored. It is shown that the multicharged‐solar‐wind component leads to a more pronounced and significant differentiation of depleted and enriched surface elements as well as a shortening of the timescale over which such surface‐compositional modifications might occur in astrophysical settings. In addition, to validate previous and future determinations of multicharged‐ion‐induced sputtering enhancement for those cases where the QCM approach cannot be used, relative quadrupole mass spectrometry (QMS)‐based measurements are presented for the same anorthite‐like thin film as were investigated by QCM, and their suitability and limitations for charge state‐enhanced yield measurements are discussed.

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Section: Introductionmentioning

confidence: 99%

Kinetic and potential sputtering of an anorthite‐like glassy thin film

et al. 2017

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“…As the energetic ions strike the film surface, two different phenomena take place in the crystal grains, depending on their orientation: ionmilling and ion-channeling. Grains that are randomly-oriented with respect to the ion-beam direction undergo ion-milling and thus are progressively removed from the sample surface [33]. Conversely, those oriented such that their open-most crystal-axis is parallel to the ionbeam undergo ion-channeling and thus survive ion-irradiation [34].…”

Section: Methodsmentioning

confidence: 99%

Engineering the grain boundary network of thin films via ion-irradiation: Towards improved electromigration resistance

Mattina

Shorubalko

et al. 2017

Acta Materialia

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Controlling the grain boundary network of small-scale materials-such as coatings and thin films-is an ambitious goal that would ultimately enable the production of components with tailored properties and improved reliability. In this work we present a new techniquewhich we term ion-induced grain boundary engineering (iGBE)-to engineer the character distribution and connectivity of grain boundaries in gold films in situ, as they are being deposited. iGBE consists of a repeated sequence of ion-induced material removal and material deposition which results in the selection and growth of crystal grains in twinned relationship. This phenomenon yields a substantial increase in the density and connectivity of Σ3 twin boundaries, which have renowned beneficial effect on the material's resistance to intergranular degradation. We confirm the improved reliability of iGBE microstructures by assessing their resistance to electromigration-one of the most common causes of failure in integrated circuit interconnects. We find that, through iGBE, interconnect lifetime increases by three orders of magnitude at standard operating conditions. Since iGBE is materialinsensitive and compatible with standard microfabrication technology, we expect it to have significant impact on microelectronics industry.

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“…Sputtering is another technique of physical vapor deposition (PVD) in which energetic ion beam bombards the surface of bulk material, displaces the atoms or molecules by energy transfer in the collision, which are then deposited on the substrate [41]. These ions, which ideally should have single charge for all ions, are positively charged and are initially produced from an inert gas.…”

Section: Sputteringmentioning

confidence: 99%

Thin Film Thermoelectric Materials for Sensor Applications: An Overview

Bali

Chetty

Mallik

2015

Thin Film Structures in Energy Applications

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The modern world depends completely on electricity, the demand for which is increasing day by day. However, carbon-based fuels for power generation and transportation being currently used, e.g., coal, petroleum, etc., are expected to ultimately deplete, due to which there is an urgent need for non-conventional energy sources. At the same time, a large (~60 %) amount of heat is wasted from these industries and vehicles, which will increase further with economic growth and industrialization. Other renewable sources have their own limitations and many are region-specific. Thermoelectric (TE) materials are a means of utilization of waste heat on a small scale by directly converting it into electricity. The generated voltage also finds application in several types of sensors. In addition, these materials can be used for cooling, which is equivalent to direct conversion of electricity into heat, without using any harmful chlorofluorocarbon (CFC) gases. This chapter is intended to give an overview of thin film thermoelectric materials with a focus on their application as different sensors.The chapter is divided into six sections. Section 7.1 introduces the phenomenon of thermoelectricity-Seebeck, Peltier, and Thomson effects, and the thermoelectric figure of merit (zT). Section 7.2 deals with the basics of transport properties, while in Sect. 7.3 the different strategies to improve zT are briefly summarized. Section 7.4 describes the need of going towards lower dimensions, i.e., the thin film state, for improvement of zT. Different fabrication methods are summarized in Sect. 7.5. Finally, in Sect. 7.6, application of thermoelectric thin films as different types of sensors is described.

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Sputtering: survey of observations and derived principles

Cited by 58 publications

References 107 publications

Kinetic and potential sputtering of an anorthite‐like glassy thin film

Kinetic and potential sputtering of an anorthite‐like glassy thin film

Engineering the grain boundary network of thin films via ion-irradiation: Towards improved electromigration resistance

Thin Film Thermoelectric Materials for Sensor Applications: An Overview

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