Surface analytical characterization of oxide-free Si(100) wafer surfaces

Mühlhoff, L.; Bolze, Tom

doi:10.1007/bf00572370

Cited by 15 publications

(5 citation statements)

References 7 publications

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“…[27][28][29] Silicon surfaces that contain a native oxide film after storage at ambient conditions, or have been etched with HF, can be plasma treated to create a hydrophilic surface with a water contact angle less than 5°. [27][28][29] Silicon surfaces that contain a native oxide film after storage at ambient conditions, or have been etched with HF, can be plasma treated to create a hydrophilic surface with a water contact angle less than 5°.…”

Section: Discussionmentioning

confidence: 99%

Atmospheric oxygen plasma activation of silicon (100) surfaces

Habib¹,

Gonzalez²,

Hicks³

2010

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inSurface functionalization of graphenelike materials by carbon monoxide atmospheric plasma treatment for improved wetting without structural degradation J. Vac. Sci. Technol. B 30, 03D107 (2012); 10.1116/1.3695337Study on surface modification of silicon using CHF3/O2 plasma for nano-imprint lithographya) Yttrium silicate formation on silicon: Effect of silicon preoxidation and nitridation on interface reaction kinetics Effects of ion irradiation on silicon oxidation in electron cyclotron resonance argon and oxygen mixed plasma Silicon ͑100͒ surfaces were converted to a hydrophilic state with a water contact angle of Ͻ5°by treatment with a radio frequency, atmospheric pressure helium, and oxygen plasma. A 2 in. wide plasma beam, operating at 250 W, 1.0 l/min O 2 , 30 l/min He, and a source-to-sample distance of 3 Ϯ 0.1 mm, was scanned over the sample at 100Ϯ 2 mm/ s. Plasma oxidation of HF-etched silicon caused the dispersive component of the surface energy to decrease from 55.1 to 25.8 dyn/cm, whereas the polar component of the surface energy increased from 0.3 to 42.1 dyn/cm. X-ray photoelectron spectroscopy revealed that the treatment generated a monolayer of covalently bonded oxygen on the Si͑100͒ surface 0.15Ϯ 0.10 nm thick. The surface oxidation kinetics have been measured by monitoring the change in water contact angle with treatment time, and are consistent with a process that is limited by the mass transfer of ground-state oxygen atoms to the silicon surface.

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Section: Discussionmentioning

confidence: 99%

Atmospheric oxygen plasma activation of silicon (100) surfaces

Habib¹,

Gonzalez²,

Hicks³

2010

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…The Si 2p peak seen at ϳ99.5 eV in the reference spectrum can be decomposed into the spin-orbit-split doublet, Si 2p 3/2 and 1/2, with a peak energy difference of ϳ0.6 eV ͑vertical lines͒. [38][39][40][41] The SiO x -related peaks posses in the energy range between 102 and 104 eV. 39,40,[42][43][44][45] We can never find such an oxide-related peak in the as-prepared spectrum ͓Fig.…”

Section: Xps Measurementmentioning

confidence: 91%

Photo-oxidation effects of light-emitting porous Si

Tamura

Adachi

2009

Journal of Applied Physics

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The effects of light illumination on porous silicon (PSi) properties have been studied using photoluminescence (PL), PL excitation (PLE), and x-ray photoelectron spectroscopy (XPS) measurements. The PL spectrum evolution in PSi sample under light illumination at various wavelengths indicates that the photo-oxidation occurs and causes a decrease in its intensity with increasing illumination time t. The decrease in the PL intensity IPL can be written as logarithmic expression, namely, the Elovich equation IPL∝−α ln t, where α is the quenching rate of the PL intensity associated with the native oxide growth. The α value is dependent on the illuminated photon energy Epo in a manner α=0.050Epo. Each PL spectrum can be deconvoluted into four Gaussian peaks. The higher the PL peak energy, the larger its photo-oxidation-induced blueshift. This fact and XPS results support that the light emission in a porous sample is due to the quantum-size effect, i.e., relaxation of the momentum conservation at and above the indirect absorption edge (supra-indirect-gap emission). The PLE spectra suggest that the surface hydrogen termination should influence the highly excited carrier dynamics in nanocrystalline PSi materials.

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“…The Si 2 p peak seen at ∼ 99 eV can be split into two peaks, Si 2 p 3/2 and 1/2, with a peak energy difference of ∼ 0.6 eV. [16][17][18][19] The peak observed at ∼ 103 eV is mainly due to silicon bonded to oxygen as in SiO 2 . 17,18,[20][21][22][23] We can easily understand from Fig.…”

Section: Xps Measurementmentioning

confidence: 99%

Chemical Treatment Effects on Si(111) Surfaces in Aqueous NaF Solution

Tomita

Adachi

2001

Jpn. J. Appl. Phys.

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Chemically treated Si(111) surfaces in aqueous NaF solution have been investigated using spectroscopic ellipsometry (SE), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and wettability measurements. The SE data indicate that the solution causes the removal of the native oxide upon immersing the sample in the solution. After the native oxide is etched away completely, the SE data yield the spectrum of a slightly roughened surface. The SE-estimated roughness is ∼ 0.64 nm, which is considerably larger than the AFM determined rms value (∼ 0.26 nm); the difference is considered to be due to the SE technique being sensitive not only to the surface microroughness but also to the adsorbed chemical species. The XPS data support the fact that the native oxide is removed upon immersing the sample in the solution. It is also shown that the Si LMM signal at ∼ 1160 eV can provide direct information regarding the relative quality of surface regions prepared by different methods. The wettability measurements show that the as-degreased surface is hydrophilic (θ ∼ 35 • ), while the NaF-etched surface is hydrophobic (θ ∼ 70 • ).

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Surface analytical characterization of oxide-free Si(100) wafer surfaces

Cited by 15 publications

References 7 publications

Atmospheric oxygen plasma activation of silicon (100) surfaces

Atmospheric oxygen plasma activation of silicon (100) surfaces

Photo-oxidation effects of light-emitting porous Si

Chemical Treatment Effects on Si(111) Surfaces in Aqueous NaF Solution

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