2010
DOI: 10.1016/j.diamond.2010.01.051
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Surface analysis of CVD diamond exposed to fusion plasma

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Cited by 17 publications
(10 citation statements)
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“…The pronounced dip in intensity 302.5 eV is caused by a bandgap in the unoccupied density of states (and is therefore a good indication of insulating or semiconducting character) 38 whilst a subsequent peak at 327 eV is caused by multiple scattering events and is a good indication of crystallographic order 39 . Similar to previous studies 40 , area 1 exhibits an additional weak 'pre-edge' peak at 285.5 eV that is attributed to excitation to a π * state and is therefore indicative of the formation of unsaturated, sp 2 bonded carbon. The spectrum from area 1, however, retains the other distinctive diamond features (notably the dip and peak at 302.5 eV and 327 eV, respectively) and lacks either the broad, featureless profile above 289 eV that is typically seen in amorphous or defective carbon, or the sharp exciton and σ * features that are shifted above 291 eV for graphite 31 .…”
supporting
confidence: 84%
“…The pronounced dip in intensity 302.5 eV is caused by a bandgap in the unoccupied density of states (and is therefore a good indication of insulating or semiconducting character) 38 whilst a subsequent peak at 327 eV is caused by multiple scattering events and is a good indication of crystallographic order 39 . Similar to previous studies 40 , area 1 exhibits an additional weak 'pre-edge' peak at 285.5 eV that is attributed to excitation to a π * state and is therefore indicative of the formation of unsaturated, sp 2 bonded carbon. The spectrum from area 1, however, retains the other distinctive diamond features (notably the dip and peak at 302.5 eV and 327 eV, respectively) and lacks either the broad, featureless profile above 289 eV that is typically seen in amorphous or defective carbon, or the sharp exciton and σ * features that are shifted above 291 eV for graphite 31 .…”
supporting
confidence: 84%
“…Further details of the HF-CVD system can be found in a previously published paper. 19 ZnO films of $6 lm thickness were sputter-deposited at room temperature and at a rate of $50 nmÁmin À1 on the diamond film surface using a novel process known as high target utilization sputtering (HiTUS). 20 HiTUS sputtering is based on a remotely generated high density plasma ($10 12 -10 13 ionsÁcm À3 , compared to a conventional magnetron plasma, $10 10 ion-sÁcm À3 ), which is produced in a side chamber linked by an arm to the main vacuum deposition chamber.…”
Section: Methodsmentioning
confidence: 99%
“…After exposure to 10 23 deuterons per m 2 in MAGPIE a lot of 10 nm-100 nm sized hemispherical and conical features appeared on the CVD surface, which was explained by re-deposition of the eroded carbon [5[6]. Surface analysis of CVD diamond films exposed in tokamak DIII-D showed that the bulk micro-crystalline nature of the sample is unaltered while a continuous 10-15 nm thick interfacial layer was formed at the surface; a structural composition of 24% diamond and 76% amorphous carbon in the layer was measured [4]. Finally, many other studies have also been devoted to damage creation in diamond upon exposure to heavier ions (carbon, oxygen, argon, xenon, …) in a wide range of impact energies [15[16[17[18[19].…”
Section: Chemical Sputtering Of Carbon and Diamondmentioning
confidence: 99%