Surface alloying at InAsGaAs interfaces grown on (001) surfaces by molecular beam epitaxy

Bottom-up engineering of InAs at the nanoscale: From V-shaped nanomembranes to nanowires

“…At very low V/III ratio (V/III¼6, shown elsewhere [9] and not shown here) we find only indium droplets. This is in agreement with the observation that the formation of indium terminated Si(001) surfaces inhibits the formation of InAs islands [60]. By increasing the V/III ratio up to 12, the nanostructures start to form.…”

Anisotropic diffusion of In adatoms on pseudomorphicInxGa1−xAsfilms: First-p

“…25 As mentioned in the Introduction, we will focus on In migration under those conditions where alloying in the WL leads to a surface atomic arrangement with threefold periodicity along the ͓110͔ surface direction. More precisely, we study surface diffusion on two idealized surfaces with a (2ϫ3) and a (1 ϫ3) reconstruction pattern.…”

“…The extensive experimental data on the initial stages of InAs/ GaAs͑001͒ growth indicate that for conventional growth rates (Ӎ0.1 ML/s) substantial alloying occurs which converts the WL into a ternary In x Ga 1Ϫx As(001) alloy exhibiting specific (1ϫ3) or (2ϫ3) reconstruction patterns. [23][24][25] Based on this information, some of us have recently studied the ab initio thermodynamics of the WL ͑Ref. 26͒ and found support for surface alloying for submonolayer InAs coverage under As-rich growth conditions.…”

The Nature and Origin of Lateral Composition Modulations in Short-Period Strained-Layer Superlattices

“…It has also been observed for the growth of tensile InGaAs layers on (001) InP [52] and tensile GaAs on (001) InAs [53]. It is possible, therefore, that a similar roughening occurs during the growth of the tensile AlAs layers in the (AIAs)~(InAs).…”