2022
DOI: 10.1016/j.colsurfa.2022.129718
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Surface acidity of colloidal silica and its correlation with sapphire surface polishing

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Cited by 5 publications
(4 citation statements)
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“…This acidic character can catalyze the hydrolysis/transesterification of PLA [ 37 ]. The silica surface also has a slightly acidic behavior [ 38 ] and could, in principle, provide a further contribution to PLA degradation. However, the main factor accelerating the hydrolysis in samples with higher SiNP content can be ascribed to the increased crystallinity recorded at higher SiNP content.…”
Section: Resultsmentioning
confidence: 99%
“…This acidic character can catalyze the hydrolysis/transesterification of PLA [ 37 ]. The silica surface also has a slightly acidic behavior [ 38 ] and could, in principle, provide a further contribution to PLA degradation. However, the main factor accelerating the hydrolysis in samples with higher SiNP content can be ascribed to the increased crystallinity recorded at higher SiNP content.…”
Section: Resultsmentioning
confidence: 99%
“…Single-crystal sapphire specimen (α-Al 2 O 3 ) are currently one of the most widely applied materials in the fields of defense, aerospace, microelectronics, and the medical domain [ 1 , 2 , 3 , 4 ] due to their excellent physicochemical properties and material characteristics, such as high hardness (Mohs hardness 9), high melting point (2045 °C), high light transmittance, high chemical stability, and high thermal stability [ 5 , 6 , 7 , 8 , 9 , 10 ]. Sapphire has not only become the most widely used substrate material for traditional LEDs [ 11 , 12 , 13 , 14 ] but also has a large number of applications in mini/micro-LEDs, which are currently very popular.…”
Section: Introductionmentioning
confidence: 99%
“…Liu et al [2] used a neodymium-doped colloidal silica composite abrasive to process sapphire, which improved the processing efficiency and the surface quality of sapphire. Xu et al [3] proposed a new type of catalyst (SoFe III ) to process sapphire; the material removal rate was 1.6 times that of ordinary CMP, and a sapphire wafer with a surface roughness of 0.053 nm was obtained.GU et al [4] combined the low-field nuclear magnetic resonance (LF NMR) and freeze-drying-programmed temperature desorption (TPD) techniques to investigate the true acidity of the surface Si-OH groups, and discovered that there are two possible different mechanisms for sapphire polishing by silica nanoparticles, depending on the pH of the polishing slurries. Kwon [5] analyzed the source of impurity particles, and suggested that the main internal source of impurity particles was the agglomeration of particles in the polishing solution.…”
Section: Introductionmentioning
confidence: 99%