Sur l'evaluation des densites d'etats de surface relativement elevees dans des structures metal-oxyde (thermique)-silicium

Courat, J.-P.; Nuzillat, G.; Sixou, P.

doi:10.1016/0038-1098(69)90498-0

Cited by 4 publications

(3 citation statements)

References 7 publications

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“…I n our case Cs > Cs + Co as Cs s/Co is always > 20 and C,/Co ranges from 0.2 to about 3. As shown by Courat et al [15], this approximation leads to if E, = Up/tox, to, being the oxide thickness and E the dielectric constant of the oxide.…”

Section: General Outline Of the Resnltsmentioning

confidence: 96%

Electronic properties of the SiSiO2 interface as a function of oxide growth conditions. I. Surface states

Pautrat

Pfister

1972

Phys. Stat. Sol. (a)

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A well pronounced minimum is observed in the surface states distribution of dry grown MOS samples. Some states are created during oxidation (V‐states). These acceptor like states are located at energies higher than Ei—0.1 eV. They disappear after oxygen annealing at lower temperatures. Other states (O‐states) appear during this last treatment. Their properties are less sharply defined. Their capture cross section is higher than for V‐states. Vacuum annealing of the completed sample leads to some reconstruction of the interface.

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Section: General Outline Of the Resnltsmentioning

confidence: 96%

Electronic properties of the SiSiO2 interface as a function of oxide growth conditions. I. Surface states

Pautrat

Pfister

1972

Phys. Stat. Sol. (a)

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“…The capacitance in inversion is not affected but a small dispersion in C acc may arise. In some extreme cases (D it Ͼ10 13 eV Ϫ1 cm Ϫ2 ) a greater dispersion in C acc values has been reported 31 together with a clear shift of V FB with increasing frequency. However, the use of Si ͑111͒ substrate is probably the main cause for this elevated density of interface states in this rather old work.…”

Section: Frequency Dependence Of the C -V Curvesmentioning

confidence: 99%

“…To the best of our knowledge only a few works have been reported in the past 14,[31][32][33][34] showing a parallel shift of measured C -V's with frequency. An interesting common feature in these works is that all of them report on interfaces between silicon and poor dielectric materials ͓e.g., ZnS:Mn ͑Ref.…”

Section: Frequency Dependence Of the C -V Curvesmentioning

confidence: 99%

Electrical and structural characteristics of yttrium oxide films deposited by rf-magnetron sputtering on n-Si

Evangelou¹,

Wiemer²,

Fanciulli³

et al. 2003

Journal of Applied Physics

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Yttrium oxide dielectric films were grown by rf-magnetron sputtering on n-Si(100) substrates and annealed in vacuum at temperatures ranging from 400 to 600°C. The main aim of this work was the investigation of the interface between the dielectric film and silicon. Both structural ͑x-ray diffraction and transmission electron microscopy͒ and electrical characterization were used for this purpose. No structural change was observed on the interfacial native oxide layer after annealing at 600°C for 1 h. Metal-oxide-semiconductor structures defined by the evaporation of Al electrodes show low leakage currents, moderate dielectric constant ͑around 14͒, and high densities of positive charges trapped in the oxide. Hysteresis effects in capacitance-voltage (C -V) curves reduce with the annealing temperature. Another interesting observation is the parallel shift of the C -V curves along the voltage axis with frequency. An insulator trap model is proposed to explain this behavior.

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Electrical and Optical Properties of MIS Devices

Agajanian¹

1976

Semiconducting Devices

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Sur l'evaluation des densites d'etats de surface relativement elevees dans des structures metal-oxyde (thermique)-silicium

Cited by 4 publications

References 7 publications

Electronic properties of the SiSiO2 interface as a function of oxide growth conditions. I. Surface states

Electronic properties of the SiSiO2 interface as a function of oxide growth conditions. I. Surface states

Electrical and structural characteristics of yttrium oxide films deposited by rf-magnetron sputtering on n-Si

Electrical and Optical Properties of MIS Devices

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