Electronic properties of the SiSiO2 interface as a function of oxide growth conditions. I. Surface states

Pautrat, J.L.; Pfister, J. C.

doi:10.1002/pssa.2210110130

Cited by 11 publications

(2 citation statements)

References 14 publications

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“…This hypothesis was confirmed by Powell and Derbenwick [a]. However, if the photon energy used in the irradiation experiments is less than 9 eV, internal photoemission occurs, and this technique can be employed to study the interface barrier height [3] or electron traps in the insulator [4].…”

Section: Introductionmentioning

confidence: 83%

Illumination with Ultraviolet Light of MOS Capacitors

Verhoeven

Saminadayar

Pfister

1974

Phys. Stat. Sol. (a)

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UV illumination of MOS capacitors induces an increase of the surface state density of the SiSiO2 interface. This increase depends on the number of charges which cross the structure during the illumination. Bias‐temperature treatment are performed on preilluminated samples and an annihilation of the created surface states is observed depending on the bias. The results are explained by a qualitative model in which a breaking of SiH or SiOH bonds of the SiSiO2 heterojunction zone occurs during the illumination and a restructuration of these broken bonds occurs during the bias‐temperature anneal.

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Section: Introductionmentioning

confidence: 83%

Illumination with Ultraviolet Light of MOS Capacitors

Verhoeven

Saminadayar

Pfister

1974

Phys. Stat. Sol. (a)

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“…An other way to reduce the density of surface states has been indicated by Kooi (4). More recently, measurements made by Pautrat and Pfister (5) and Caplain et al (6) conclude also that chemical treatments a r e able to reduce the density of surface states at the interface between silicon and silica.…”

Section: Jp Dauchot and J Van Cakenberghementioning

confidence: 96%

Schottky photodiodes and adsorption

Dauchot

Cakenberghe

1974

Phys. Stat. Sol. (a)

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Effect of the type of silicon on some fundamental properties of the Si–SiO2 interface

Caplain

Pautrat

Pfister

1974

Phys. Stat. Sol. (a)

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The surface state distribution of dry grown MOS samples depends on the oxygen pressure during annealing. After a low pressure annealing before electrode deposition, the distribution of surface states, as well as their evolution during subsequent low-temperature annealings in the presence of water vapor, depends on the conductivity type of the silicon.A simplified model for the equilibrium of defects in silica a t high temperatures allows to explain the behaviour of the doping impurities. La distribution des btats d'interface sur des 6chantillons MOS fabriq1ii.s en oxyghne sec dbpend des traitements de recuit et en particulier de la pression d'oxyghe. Dans le domaine des faibles pressions la distribution d'ktats, ainsi que son 6volution lors de traitements d'annihilation sous vapeur d'eeu depend du type des substrats de siliciiim utilisi..Un modele simplifik d'kquilibre de dhfauts dans la silice L haute tempbrature nous a permis de rendre compte de l'effet observi..

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Electronic properties of the SiSiO2 interface as a function of oxide growth conditions. I. Surface states

Cited by 11 publications

References 14 publications

Illumination with Ultraviolet Light of MOS Capacitors

Illumination with Ultraviolet Light of MOS Capacitors

Schottky photodiodes and adsorption

Effect of the type of silicon on some fundamental properties of the Si–SiO2 interface

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