2007
DOI: 10.1109/tmag.2007.893527
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Suppression of Switching-Field Variation by Surface Oxidation Depending on the Shape of the CoFeB Free Layer

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Cited by 5 publications
(4 citation statements)
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“…Previous studies on CoFeB have shown the presence of a superparamagnetic layer, albeit generally with a smaller thickness ͑ranging from 3 to 8.5 Å, depending on the adjacent layers͒. 13,14 Our study suggests a more complicated scenario. As we increase the thickness of CoFeB, sputter deposition yields the formation of discrete clusters of CoFeB rather than a continuous film.…”
mentioning
confidence: 45%
“…Previous studies on CoFeB have shown the presence of a superparamagnetic layer, albeit generally with a smaller thickness ͑ranging from 3 to 8.5 Å, depending on the adjacent layers͒. 13,14 Our study suggests a more complicated scenario. As we increase the thickness of CoFeB, sputter deposition yields the formation of discrete clusters of CoFeB rather than a continuous film.…”
mentioning
confidence: 45%
“…Just as ferromagnetic cobalt ferrite has a much larger anisotropy than Co-Fe, the surface oxide here, Co-Fe-B-O x , is likely to be ferrimagnetic and of higher anisotropy than Co-Fe-B. Surface oxidation has previously been reported to increase anisotropy and reduce the switching field distribution for Co-Fe-B MTJs [41].…”
Section: Resultsmentioning
confidence: 91%
“…periodic removal of mesh elements, random profiles, etc), different effects can be seen in the final device response. Additionally, an alternative strategy to improve the thermal stability of the nanostructures can resort to the edge oxidation of CoFeB and NiFe present at the free layer used to reduce the switching field distribution for memory applications [55]. The authors argued that the edge saturation magnetization decreases upon oxidation, suppressing the domain wall nucleation at edge defects, although an increase in the anisotropy field and slight decrease in TMR was observed [55].…”
Section: Fabricated Devicesmentioning
confidence: 99%
“…Additionally, an alternative strategy to improve the thermal stability of the nanostructures can resort to the edge oxidation of CoFeB and NiFe present at the free layer used to reduce the switching field distribution for memory applications [55]. The authors argued that the edge saturation magnetization decreases upon oxidation, suppressing the domain wall nucleation at edge defects, although an increase in the anisotropy field and slight decrease in TMR was observed [55]. This strategy could be extended to nanoscale sensors, helping to stabilize the ferromagnetic layers (sensing and pinned) behavior.…”
Section: Fabricated Devicesmentioning
confidence: 99%