Abstract. Ultrasensitive magnetic field sensors envisaged for applications on biomedical imaging require the detection of low-intensity and low-frequency signals. Therefore linear magnetic sensors with enhanced sensitivity low noise levels and improved field detection at low operating frequencies are necessary. Suitable devices can be designed using magnetoresistive sensors, with room temperature operation, adjustable detected field range, CMOS compatibility and cost-effective production. The advent of spintronics set the path to the technological revolution boosted by the storage industry, in particular by the development of read heads using magnetoresistive devices. New multilayered structures were engineered to yield devices with linear output. We present a detailed study of the key factors influencing MR sensor performance (materials, geometries and layout strategies) with focus on different linearization strategies available. Furthermore strategies to improve sensor detection levels are also addressed with best reported values of ∼40 pT/ √ Hz at 30 Hz, representing a step forward the low field detection at room temperature.

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Highly sensitive nanosensors with high spatial resolution provide the necessary features for high accuracy imaging of isolated magnetic nanoparticles. In this work, we report the fabrication and characterization of MgO-barrier magnetic tunnel junction nanosensors, with two exchange-pinned electrodes. The perpendicular magnetization configuration for field sensing is set using a two-step annealing process, where the second annealing temperature was optimized to yield patterned sensors responses with improved linearity. The optimized circular nanosensors show sensitivities up to 0.1%/Oe, larger than previously reported for nanometric sensors and comparable to micrometric spin-valves. Our strategy avoids the use of external permanent biasing or demagnetizing fields (large for smaller structures) to achieve a linear response, enabling the control of the linear operation range using only the stack and thus providing a small footprint device.

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Perpendicular magnetic tunnel junctions (p-MTJs) have been explored for spin transfer torque magnetic random access memory devices (STT-MRAMs). The current-induced switching (CIS) of the p-MTJs requires a relatively high current density (J); thereby, very thin insulating barriers are required, consequently increasing the risk of non-tunneling conduction mechanisms through the MgO film. In this work, we fabricated CoFeB/MgO/CoFeB p-MTJs and studied the CIS characteristics, with the obtained switching current densities of about 2 × 1010 A/m2. The filament conduction through the MgO film was induced by applying a high set current (Iset) until a significant decrease in the resistance (R) is observed. A decrease in R with increasing current (I) for parallel (P) and antiparallel (AP) states was observed. In contrast, an increase in R with the increasing I value was observed for filament p-MTJs. We used a two-channel model to extract the filament resistance (Rf) and filament current (If). The Rf dependence on the electrical power (Pf) was linearly fitted, and a heating coefficient β of about 6%/mW was obtained, which was much higher than 0.15%/mW obtained from the bulk metallic multilayers of the top electrode. The CIS for filament p-MTJs was modeled by considering the bias dependence of the tunneling and the thermal dependence of Rf, showing a significant change in the CIS curves and switching currents. Our study addresses the effect of filament conduction on the tunneling current of CoFeB/MgO/CoFeB p-MTJs, critical for the design and control of the p-MTJ based devices, such as STT-MRAMs.

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Recent paradigms, such as smart cities/homes, Internet of Things or portable and implantable healthcare systems, require the use of flexible and conformal sensors that can be assembled to arbitrarily 3D complex shapes. A good set of simple and available models is of paramount importance to help designing and fabricating such devices. In this work, analytical expressions for the bending plane, the curvature radii and the stress/strain distributions of multilayer composite devices are derived for the cases of uniaxial and biaxial plane stress and plane strain and generalised plane strain. The analytical results are summarized, and two case-studies are analysed and compared with the help of these models: bilayer and trilayer hinges for self-assembled structures and rolled up flexible substrates with sensors on top. The dependence of the curvature radii and strain and stress distributions on several mechanical properties of the composite is assessed. The applicability of these models to support the design of flexible sensors, electronics or haptic devices is discussed and their practical limitations analysed.

The ability to detect the magnetic fields that surround us has promoted vast technological advances in sensing techniques. Among those, magnetoresistive sensors display an unpaired spatial resolution. Here, we successfully control the linear range of nanometric sensors using an interfacial exchange bias sensing layer coupling. An effective matching of material properties and sensor geometry improves the nanosensor performance, with top sensitivities of 3.7% mT(-1). The experimental results are well supported by 3D micromagnetic and magneto-transport simulations.