Suppression of surface recombination in CuInSe2 (CIS) thin films via Trioctylphosphine Sulfide (TOP:S) surface passivation

Luo, Shi; Eisler, Carissa N.; Wong, Tsun-Hsin; Xiao, Hai; Lin, Chuan-En; Wu, Ting; Shen, Chang‐Hong; Shieh, Jia‐Min; Tsai, Chuang-Chuang; C, Liu; Atwater, Harry A.; Goddard, William A.; Lee, Jiun-Haw; Greer, Julia R.

doi:10.1016/j.actamat.2016.01.021

Cited by 14 publications

(9 citation statements)

References 47 publications

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“…We find again that the peak maxima are at almost the same position for the different Ag concentrations, and with or without AlO x . We also find that the intensity is 3-4 times higher in the presence of the AlO x layer-this could be the effect of passivation [24]. While the PL is coming from the absorber layer, the PL yield depends on all the recombination paths.…”

Section: Opto-electrical Characterizationmentioning

confidence: 63%

Ultrathin Cu(In,Ga)Se2 Solar Cells with Ag/AlOx Passivating Back Reflector

et al. 2021

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Ultrathin Cu(In,Ga)Se2 (CIGS) absorber layers of 550 nm were grown on Ag/AlOx stacks. The addition of the stack resulted in solar cells with improved fill factor, open circuit voltage and short circuit current density. The efficiency was increased from 7% to almost 12%. Photoluminescence (PL) and time resolved PL were improved, which was attributed to the passivating properties of AlOx. A current increase of almost 2 mA/cm2 was measured, due to increased light scattering and surface roughness. With time of flight—secondary ion mass spectroscopy, the elemental profiles were measured. It was found that the Ag is incorporated through the whole CIGS layer. Secondary electron microscopic images of the Mo back revealed residuals of the Ag/AlOx stack, which was confirmed by energy dispersive X-ray spectroscopy measurements. It is assumed to induce the increased surface roughness and scattering properties. At the front, large stains are visible for the cells with the Ag/AlOx back contact. An ammonia sulfide etching step was therefore applied on the bare absorber improving the efficiency further to 11.7%. It shows the potential of utilizing an Ag/AlOx stack at the back to improve both electrical and optical properties of ultrathin CIGS solar cells.

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Section: Opto-electrical Characterizationmentioning

confidence: 63%

Ultrathin Cu(In,Ga)Se2 Solar Cells with Ag/AlOx Passivating Back Reflector

et al. 2021

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“…The PL film spectra of the raw and HT-treated QDs are shown in Figure S3. The PL intensity increased after surface treatment with HT, which indicates that the surface-defect traps were suppressed because of the passivation of the QDs. , …”

Section: Resultsmentioning

confidence: 93%

“…The PL intensity increased after surface treatment with HT, which indicates that the surface-defect traps were suppressed because of the passivation of the QDs. 21,22 The chemical composition and binding alignment of the Cldoped ZnMgO NPs were determined using XPS, as shown in Figure 2a−c. The high-resolution spectra of Zn 2p for ZnMgO NPs (Figure 2a) exhibited two main peaks at 1044.8 and 1021.1 eV, which correspond to Zn 2p 1/2 and Zn 2p 3/2 , respectively.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…An increase in the number of defects on the surface of QDs induces a lower QY, a phenomenon that is even more severe in InP-based devices. − The stability and QY can be improved through post-treatment by passivating the surface defects on the QDs to render them more efficient. A passivation post-treatment with trioctylphosphine sulfide (TOP:S) on the surface of CuInSe 2 QDs for solar cells effectively reduced the number of defects in the QDs . A similar approach was applied to InP QDs synthesized with a (DMA) 3 P phosphide source; the QY and the device performance of the InP-based QLEDs were improved by the passivated QDs with TOP/S …”

Section: Introductionmentioning

confidence: 99%

“…A passivation post-treatment with trioctylphosphine sulfide (TOP:S) on the surface of CuInSe 2 QDs for solar cells effectively reduced the number of defects in the QDs. 21 A similar approach was applied to InP QDs synthesized with a (DMA) 3 P phosphide source; the QY and the device performance of the InP-based QLEDs were improved by the passivated QDs with TOP/S. 22 The charge balance of holes and electrons is another important factor in determining the efficiency of QLEDs.…”

Section: ■ Introductionmentioning

confidence: 99%

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Efficiency Enhancement of Tris(dimethylamino)-phosphine-Based Red Indium Phosphide Quantum-Dot Light-Emitting Diodes via Chlorine-Doped ZnMgO Electron Transport Layers

Jiang

Chae

2020

J. Phys. Chem. C

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In this study, multishelled InP-based quantum dots (QDs) were synthesized using a phosphorus source tris(dimethylamino)phosphine [(DMA)3P] and were applied to solution-processed QD light-emitting diode (QLED) devices. (DMA)3P is not only a safe phosphorus source but is also a low-cost precursor for InP QDs. The quantum yield of the QDs increased from 71.0 to 81.8% by post-treatment with hexanethiol. The efficiency of the (DMA)3P-based red InP QLEDs was enhanced by using chlorine-doped ZnMgO (Cl-doped ZnMgO) nanoparticles (NPs) for the electron transport layer (ETL), which improved the charge balance in QLEDs. The energy barrier was reduced from 0.21 to 0.03 eV between the emitting layer and ETL with the Cl-doped ZnMgO NPs compared to that of the ZnMgO NPs ETL, and the electron injection barrier from the cathode to ETL increased as well. The maximum external quantum efficiency of the red InP-based QLEDs improved from 1.8 to 4.0% by Cl-doping the ZnMgO NPs. This is the highest device performance ever reported for QLEDs with (DMA)3P-based InP QDs. Employing the Cl-doped ZnMgO NPs for the ETL reduces the electron transport, balances the recombination of holes and electrons, and provides an efficient way of improving the charge balance in (DMA)3P-based InP QLEDs for low-cost electroluminescent devices.

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From Nanostructural Evolution to Dynamic Interplay of Constituents: Perspectives for Perovskite Solar Cells

et al. 2018

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Moving away from the high-performance achievements in organometal halide perovskite (OHP)-based optoelectronic and photovoltaic devices, intriguing features have been reported in that photocarriers and mobile ionic species within OHPs interact with light, electric fields, or a combination of both, which induces both spatial and temporal changes of optoelectronic properties in OHPs. Since it is revealed that the transport of photocarriers and the migration of ionic species are affected not only by each other but also by the inhomogeneous character, which is a consequence of the route selected to deposit OHPs, understanding the nanostructural evolution during OHP deposition, in terms of the resultant structural defects, electronic traps, and nanoscopic charge behaviors, will be valuable. Investigation of the film-growth mechanisms and strategies adopted to realize OHP films with less-defective large grains is of central importance, considering that single-crystalline OHPs have exhibited the most beneficial properties, including carrier lifetimes. Critical factors governing the behavior of photocarriers, mobile ionic species, and nanoscale optoelectronic properties resulting from either or all of them are further summarized, which may potentially limit or broaden the optoelectronic and photovoltaic applications of OHPs. Through inspection of the recent advances, a comprehensive picture and future perspective of OHPs are provided.

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Suppression of surface recombination in CuInSe2 (CIS) thin films via Trioctylphosphine Sulfide (TOP:S) surface passivation

Cited by 14 publications

References 47 publications

Ultrathin Cu(In,Ga)Se2 Solar Cells with Ag/AlOx Passivating Back Reflector

Ultrathin Cu(In,Ga)Se2 Solar Cells with Ag/AlOx Passivating Back Reflector

Efficiency Enhancement of Tris(dimethylamino)-phosphine-Based Red Indium Phosphide Quantum-Dot Light-Emitting Diodes via Chlorine-Doped ZnMgO Electron Transport Layers

From Nanostructural Evolution to Dynamic Interplay of Constituents: Perspectives for Perovskite Solar Cells

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