Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement

Abstract

Ni/4H-SiC Schottky barrier diodes (SBDs) were fabricated by using "face-to-face" annealing technique. As a result, we can obtain the SBDs with low leakage current in the covered area of the bottom chip reproducibly. The leakage current of this area is comparable to that of the samples without annealing. We found that the surface of this area was etched during annealing, and the increase in surface roughness was suppressed.