Suppression of leakage current in Schottky barrier metal–oxide–semiconductor field-effect transistors

Abstract

In this article we investigate the subthreshold behavior of PtSi source/drain Schottky barrier metal–oxide–semiconductor field-effect transistors. We demonstrate very large on/off ratios on bulk silicon devices and show that slight process variations can result in anomalous leakage paths that degrade the subthreshold swing and complicate investigations of device scaling.

Ambipolarity reduction in DMG asymmetric vacuum dielectric Schottky Barrier GAA MOSFET to improve hot carrier reliability

“…Contrary to the approach used by Calvet et.al. [16], and Ghoneim et.al. [18], the oxide removal techniques have been used in this work.…”

“…Where z min can be calculated from (16). Equation (21) shows the direct dependence of SS on z min which is affected by N f .…”

“…Calvet et.al, [16] presented the research work to suppress the leakage current at low bias in Schottky Barrier MOSFETs. Furthermore Ghoneim et.al, also presented [17], [18] an extensive study on suppression of ambipolar behavior in Schottky Barrier MOSFET, but both the approaches are based on the insertion of oxide.…”

Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction

“…[1][2][3][4][5]. Moreover, the thermal budget to fabricate SBMOSFETs may be significantly reduced due to elimination of the doping process.…”

Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (1 1 1)

“…Some reports have indicated that metal-oxide-semiconductor field effect transistors (MOSFETs) can be replaced by Schottky barrier (SB) MOSFETs for sub-100 nm application [23,24]. Palladium is an interesting material to adjust SB heights because it has work function closer to the valence band of Ge layer [24].…”