Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer Structure

Yu, Jie; Xu, Xiaoxin; Gong, Tiancheng; Luo, Qing; Dong, Danian; Yuan, Peng; Tai, Lu; Yin, Jigang; Zhu, Xi; Wu, Xiulong; Lv, Hangbing; Liu, Ming

doi:10.1186/s11671-019-2942-x

Cited by 18 publications

(16 citation statements)

References 22 publications

(17 reference statements)

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“…It is reported that Cu ions drift in the TaOx layer is low under electric field; 32 hence the device requires high Vforming (Fig. 1(a)).…”

Section: Based On Above Investigation We Propose the Conduction Mechanisms For Device A Andmentioning

confidence: 99%

“…In the case of Device A, the potentiation exhibits abrupt conductance change and require a higher amplitude than that of Device B; this is because of the low mobility of Cu ions in the TaOx material and, thus, a higher electric field is required to ionize the ions. 32,36 However, once the device is potentiated (complete filament formation), the depression shows a gradual conductance change. This is because it is easier to re-ionize and pulse the Cu atoms back to the top region since the tip of the filament is connected directly or close to the electrode.…”

Section: (B)(i))mentioning

confidence: 99%

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Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications

Saleem

Simanjuntak

Chandrasekaran

et al. 2021

Applied Physics Letters

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An oxidizable metal diffusion barrier inserted between the active metal electrode and the switching layer decreases the electroforming voltage and enhances the switching stability and synaptic performances in TaOx-based conducting bridge memristor devices. The TiW barrier layer avoids an excessive metal ion diffusion into the switching layer whilst the TiWOx interfacial layer formed between the barrier and switching layer. It modulates the oxygen vacancy distribution at top interface and contributes to the formation and rupture of metal ions-oxygen vacancies hybrid conducting bridge. We observe that the device that relies upon non-hybrid (metal ions only) conducting bridge suffers from the poor analogous performance. Meanwhile, the device made with the barrier layer is capable of 2-bit memory and robust 50 stable epochs. The TaOx also acts as resistance suppressing and thermal enhancement layer, which helps to minimize overshooting current. The enhanced analog device with high linear weight update shows multilevel cell characteristics and stable 50 epochs. To validate the neuromorphic characteristic of the devices, a simulated neural network of 100 synapses is used to recognize 10x10 pixel images.

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“…It is reported that Cu ions drift in the TaOx layer is low under electric field; 32 hence the device requires high Vforming (Fig. 1(a)).…”

Section: Based On Above Investigation We Propose the Conduction Mechanisms For Device A Andmentioning

confidence: 99%

Section: (B)(i))mentioning

confidence: 99%

Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications

Saleem

Simanjuntak

Chandrasekaran

et al. 2021

Applied Physics Letters

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show abstract

“…This implies that the overgrowth of the CFs was promoted by the current overshoot phenomenon. [ 30,31 ] Note that in conventional ECM systems, the stored charges in the device cause the current to exceed the CC value. In contrast, the current level in the LRS of Device 2 saturated at a certain value (≈8 × 10 −6 A) below the CC (Figure 2b), indicating that the CF growth was controlled to avoid the overshoot phenomenon.…”

Section: Resultsmentioning

confidence: 99%

Introduction of Interfacial Load Polymeric Layer to Organic Flexible Memristor for Regulating Conductive Filament Growth

Park

Kim

Lee

2020

Adv Elect Materials

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In flexible neuromorphic electronics, solution‐processed organic memristors are important elements to perform memory functions. Despite considerable development for improving performances of organic memristors, the devices still exhibit the poor reliability and uniformity due to the stochastic characteristics of the conductive filament (CF) growth. Herein, the effective concept of introducing the interfacial load polymer (ILP) layers that control the CF growth in flexible organic memristors is demonstrated. In the flexible organic memristor, the ILP serves as an internal load resistor that regulates the CF growth in the electrolyte medium and the electron blocking layer, hence realizing self‐rectifying characteristics. In particular, the ILP provides the self‐compliance current of the device, which delicately limits the overgrowth of CFs. The flexible device delivers higher electrical performance (better reliability, uniformity, and the switching currents) than conventional devices without the ILP. Moreover, the device operates stably under repeated bending–straightening deformations. This unprecedented concept of achieving the capabilities of self‐compliance current and self‐rectifying property in a single memristor will provide a practical platform for constructing and realizing next‐generation flexible neuromorphic systems.

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“…Moreover, multilayer metal oxides are used as the switching materials in the CBRAMs to enhance the switching characteristics of the devices. Yu et al used a tantalum oxide homogeneous bilayer switching medium with a different stoichiometry for each layer [ 43 ]. The CBRAM device with a Ta 2 O 5 /TaO x bilayer stack presents highly reliable and uniform bipolar switching ( Figure 4 c).…”

Section: Electrode and Switching Materialsmentioning

confidence: 99%

Conductive Bridge Random Access Memory (CBRAM): Challenges and Opportunities for Memory and Neuromorphic Computing Applications

Abbas

Ang

2022

Micromachines

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Due to a rapid increase in the amount of data, there is a huge demand for the development of new memory technologies as well as emerging computing systems for high-density memory storage and efficient computing. As the conventional transistor-based storage devices and computing systems are approaching their scaling and technical limits, extensive research on emerging technologies is becoming more and more important. Among other emerging technologies, CBRAM offers excellent opportunities for future memory and neuromorphic computing applications. The principles of the CBRAM are explored in depth in this review, including the materials and issues associated with various materials, as well as the basic switching mechanisms. Furthermore, the opportunities that CBRAMs provide for memory and brain-inspired neuromorphic computing applications, as well as the challenges that CBRAMs confront in those applications, are thoroughly discussed. The emulation of biological synapses and neurons using CBRAM devices fabricated with various switching materials and device engineering and material innovation approaches are examined in depth.

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Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer Structure

Cited by 18 publications

References 22 publications

Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications

Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications

Introduction of Interfacial Load Polymeric Layer to Organic Flexible Memristor for Regulating Conductive Filament Growth

Conductive Bridge Random Access Memory (CBRAM): Challenges and Opportunities for Memory and Neuromorphic Computing Applications

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