2020
DOI: 10.1109/ted.2020.3033516
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Suppression of Edge Effect Induced by Positive Gate Bias Stress in Low-Temperature Polycrystalline Silicon TFTs With Channel Width Extension Over Source/Drain Regions

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Cited by 8 publications
(2 citation statements)
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“…Secondly, some impurity particles in the flexible OLED PI substrate will also affect the TFT characteristics. Finally, the TFT current is mainly concentrated on the device surface, considering the influence of TFT edge effect is also the direction of PBTS improvement (6).…”
Section: Tft Stabilitymentioning
confidence: 99%
“…Secondly, some impurity particles in the flexible OLED PI substrate will also affect the TFT characteristics. Finally, the TFT current is mainly concentrated on the device surface, considering the influence of TFT edge effect is also the direction of PBTS improvement (6).…”
Section: Tft Stabilitymentioning
confidence: 99%
“…Most TFTs are made of hydrogenated amorphous silicon (a-Si: H) as the primary material because its energy level is smaller than that of single-crystal silicon. With progress in manufacturing, the TFT resolution tends to be high-definition [ 3 , 4 ] at a comprehensive view illumination coupled to the ultra-high definition and beyond. Thus, the electrode pixel in TFT approaches a smaller and smaller dimension.…”
Section: Introductionmentioning
confidence: 99%