Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

Tanaka, Kenichiro; Morita, Tatsuo; Umeda, Hidekazu; Kaneko, Saichiro; Kuroda, Masayuki; Ikoshi, Ayanori; Yamagiwa, Hiroto; Okita, Hideyuki; Hikita, Masahiro; Yanagihara, Manabu; Uemoto, Yasuhiro; Takahashi, Satoru; Ueno, Hideki; Ishida, Hideyuki; Ishida, M.; Ueda, T.

doi:10.1063/1.4934184

Cited by 106 publications

(48 citation statements)

References 26 publications

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“…The existence of defects can result from surface states, point defects, and threading dislocations in the AlGaN/GaN material structure. Such defects lead to a high leakage current [3], kink effects [4], a current collapse [5], or capacitance hysteresis [6]. They can all significantly influence the performance and reliability of the devices.…”

Section: Introductionmentioning

confidence: 99%

Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

et al. 2016

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Trapping effects on two AlGaN/GaN Schottky diodes with a different composition of the AlGaN barrier layer were analyzed by current transient spectroscopy. The current transients were measured at a constant bias and at six different temperatures between 25 and 150˝C. Obtained data were fitted by only three superimposed exponentials, and good agreement between the experimental and fitted data was achieved. The activation energy of dominant traps in the investigated structures was found to be within 0.77-0.83 eV. This nearly identical activation energy was obtained from current transients measured at a reverse bias of´6 V as well as at a forward bias of+1 V. It indicates that the dominant traps might be attributed to defects mainly associated with dislocations connected predominantly with the GaN buffer near the AlGaN/GaN interface.

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Section: Introductionmentioning

confidence: 99%

Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

et al. 2016

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“…It needs to be emphasized that PSJ‐FETs do not employ any field modulating plates within the structure, typically used in conventional HFETs for breakdown enhancement and minimizing the current collapse . Tanaka et al have recently suggested that hole injection during off‐state can suppress current collapse in GaN Gate Injection Transistors . The superior current collapse performance of PSJ‐FETs, can be fundamentally attributed to the enhanced field shaping achieved intrinsically within the double heterostructure.…”

Section: Polarization Superjunctionmentioning

confidence: 99%

Low cost high voltage GaN polarization superjunction field effect transistors

Kawai

Yagi

Hirata

et al. 2017

Phys. Status Solidi A

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A comprehensive overview of novel high voltage GaN field effect transistors (FETs) based on the Polarization Superjunction (PSJ) concept and a cost-effective approach towards manufacturing these high performance devices are presented. Current challenges impeding wider adoption of GaN power switching transistors in applications, and latest results of scaled-up PSJ-FETs from POWDEC KK, have also been discussed. The article also presents hard-switching characteristics of 400V-to-800V boost converter constructed using a PSJ-FET grown on sapphire substrate and the future direction of GaN power semiconductor technology based on monolithic integration for advanced power electronics.

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“…This charge-state transition with its large time constant owing to a large E DA yields the so-called current collapse, which is a chronic problem in AlGaN/GaN HFETs [9]. Therefore, this problem must be resolved for not only improving device performance but also for assuring reliability [10].…”

Section: Introductionmentioning

confidence: 99%

Deep-Donor-Induced Suppression of Current Collapse in an AlGaN-GaN Heterojunction Structure Grown on Si

Tanaka

Ito

Takado

et al. 2020

IEICE Trans. Electron.

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TCAD simulation was performed to investigate the material properties of an AlGaN/GaN structure in Deep Acceptor (DA)-rich and Deep Donor (DD)-rich GaN cases. DD-rich semi-insulating GaN generated a positively charged area thereof to prevent the electron concentration in 2DEG from decreasing, while a DA-rich counterpart caused electron depletion, which was the origin of the current collapse in AlGaN/GaN HFETs. These simulation results were well verified experimentally using three nitride samples including buffer-GaN layers with carbon concentration ([C]) of 5 × 10 17 , 5 × 10 18 , and 4 × 10 19 cm −3. DD-rich behaviors were observed for the sample with [C] = 4 × 10 19 cm −3 , and DD energy level E DD = 0.6 eV was estimated by the Arrhenius plot of temperature-dependent I DS. This E DD value coincided with the previously estimated E DD. The backgate experiments revealed that these DD-rich semi-insulating GaN suppressed both current collapse and buffer leakage, thus providing characteristics desirable for practical usage.

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Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

Cited by 106 publications

References 26 publications

Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

Low cost high voltage GaN polarization superjunction field effect transistors

Deep-Donor-Induced Suppression of Current Collapse in an AlGaN-GaN Heterojunction Structure Grown on Si

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