Superluminescent diodes based on asymmetric double-quantum-well heterostructures

Abstract

The power and spectral characteristics of near-IR superluminescent diodes (SLDs) based on asymmetric double-quantum-well GaAs/InGaAs heterostructures are studied experimentally. It is shown that, varying the active layer composition and the spatial-single-mode active channel length of these SLDs, it is possible to widely change the achievable output optical power and the spectral width of the symmetric bell-shaped spectrum. The studied SLDs have a lower coherence function pedestal, a weaker dependence of the spectral width on the injection current, and a higher polarisation degree than the widely spread SLDs based on single-quantum-well heterostructures with the same spectral widths.

Growing epitaxial layers of InP/InGaAsP heterostructures on the profiled InP surfaces by liquid-phase epitaxy

“…InP/InGaAsP heterostructures are the main type of structures used for obtaining quantum electronics devices, such as semiconductor lasers, superluminescent radiation sources, and photodiodes with a wavelength range from 1.20 to 1.65 µm which is the most important for the systems of fibre optic communication channels and fibre optic sensors [1][2][3][4][5][6]. The uniqueness of these structures is that InGaAsP solid solutions are isoperiodic to indium phosphide, which allows creating "perfect" heterojunctions suitable for wide application in engineering [7][8][9].…”