Superluminescent diodes in the spectral range of 1.5 – 1.6 μm based on strain-compensated AlGaInAs/InP quantum wells

Сабитов, Д. Р.; Ryaboshtan, Yu. L.; Svetogorov, V. N.; Падалица, А. А.; Ладугин, М. А.; Маrmalyuk, А. А.; Васильев, М. Г.; Васильев, А. М.; Kostin, Yu. O.; Shelyakin, A. A.

doi:10.1070/qel17376

Quantum Electron.

2020

DOI: 10.1070/qel17376

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Superluminescent diodes in the spectral range of 1.5 – 1.6 μm based on strain-compensated AlGaInAs/InP quantum wells

Д. Р. Сабитов¹,

Yu. L. Ryaboshtan²,

V. N. Svetogorov³

et al.

Abstract: Superluminescent diodes based on AlGaInAs/InP separate-confinement double heterostructures with strain-compensated quantum wells are investigated. The influence of elastic strains in the active region on the output characteristics of the devices is analysed. It is shown that such a design of a superluminescent diode allows an optical power of more than 5 mW, a radiation spectrum width of more than 60 nm, a degree of output radiation polarisation up to 30 dB to be obtained at the output of a single-mode fibre, … Show more

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Cited by 3 publications

References 28 publications

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Compact superluminescent AlGaInAs/InP strain-compensated quantum-well diodes for fibre-optic gyroscopes

Сабитов¹,

Svetogorov²,

Ryaboshtan³

et al. 2022

Quantum Electron.

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Compact superluminescent diodes based on AlGaInAs/InP separate-confinement double heterostructures with strain-compensated quantum wells are studied. The characteristics of these diodes that allow their application for development of fibre-optic gyroscopes in a temperature range from –55 °C – +70 °C are demonstrated. The devices demonstrate an acceptable reliability and a potential for further improvement.

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Compact superluminescent AlGaInAs/InP strain-compensated quantum-well diodes for fibre-optic gyroscopes

Сабитов¹,

Svetogorov²,

Ryaboshtan³

et al. 2022

Quantum Electron.

View full text Add to dashboard Cite

show abstract

New Highly Reliable Optical Transmitting Modules Based on High-Power Superluminescent Diodes in the Spectral Range of 1.5–1.6 μm

Sabitov,

Svetogorov,

Ryaboshtan

et al. 2023

Bull. Lebedev Phys. Inst.

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Carrier Dynamic Investigations of AlGaInAs Quantum Well Revealed by Temperature-Dependent Time-Resolved Photoluminescence

et al. 2020

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AlGaInAs quantum well (QW) lasers have great potential in the application fields of optical communications and eye-safety lidars, owing to the advantages of good gain performance. A large amount of experimental evidence indicated that carrier dynamic affects the resonant frequency and modulation response performance of QW lasers. However, the mechanism of carrier dynamic in AlGaInAs QW structure is still ambiguous for complicated artificial multilayers. In this paper, the carrier dynamic of AlGaInAs QW structure was investigated by temperature-dependent time-resolved photoluminescence (TRPL) in the range of 14 to 300 K. Two relaxation times (a fast component and a slow one) have a major impact on the PL emission spectra of the AlGaInAs QW below 200 K. The carriers prefer a fast decay channel in the low temperature regime, whereas the slow one a higher temperature. An unconventional temperature dependence of carrier relaxation is observed in both decay processes. The carriers’ lifetime decreases with the temperature increasing till 45 K and then increases with temperature up to 250 K. It is quite different from that in the bulk semiconductor. The mechanism of temperature-dependent carrier relaxation at temperatures above 45 K is a combination of dark state occupation and a nonradiative recombination process.

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Superluminescent diodes in the spectral range of 1.5 – 1.6 μm based on strain-compensated AlGaInAs/InP quantum wells

Cited by 3 publications

References 28 publications

Compact superluminescent AlGaInAs/InP strain-compensated quantum-well diodes for fibre-optic gyroscopes

Compact superluminescent AlGaInAs/InP strain-compensated quantum-well diodes for fibre-optic gyroscopes

New Highly Reliable Optical Transmitting Modules Based on High-Power Superluminescent Diodes in the Spectral Range of 1.5–1.6 μm

Carrier Dynamic Investigations of AlGaInAs Quantum Well Revealed by Temperature-Dependent Time-Resolved Photoluminescence

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