Superior High Transistor’s Effective Mobility of 325 cm2/V-s by 5 nm Quasi-Two-Dimensional SnON nFET

Abstract

This work reports the first nanocrystalline SnON (7.6% nitrogen content) nanosheet n-type Field-Effect Transistor (nFET) with the transistor’s effective mobility (µeff) as high as 357 and 325 cm2/V-s at electron density (Qe) of 5 × 1012 cm−2 and an ultra-thin body thickness (Tbody) of 7 nm and 5 nm, respectively. At the same Tbody and Qe, these µeff values are significantly higher than those of single-crystalline Si, InGaAs, thin-body Si-on-Insulator (SOI), two-dimensional (2D) MoS2 and WS2. The new discovery of a slower µeff decay rate at high Qe than that of the SiO2/bulk-Si universal curve was found, owing to a one order of magnitude lower effective field (Eeff) by more than 10 times higher dielectric constant (κ) in the channel material, which keeps the electron wave-function away from the gate-oxide/semiconductor interface and lowers the gate-oxide surface scattering. In addition, the high µeff is also due to the overlapped large radius s-orbitals, low 0.29 mo effective mass (me*) and low polar optical phonon scattering. SnON nFETs with record-breaking µeff and quasi-2D thickness enable a potential monolithic three-dimensional (3D) integrated circuit (IC) and embedded memory for 3D biological brain-mimicking structures.

Semiconducting Double-Layer Lead Monoxide Tin Oxide Nanostructures for Photodetectors

“…The direction of electron transmission may be changed by performing either doping or compositing, which allows for a significant degree of separation of electrons and holes compared to what would be achievable with a heterojunction. In the literature, there are many methods to improve photodetector performance. , A suitable heterojunction driven by external or internal fields might be useful to increase the performance of the dissociation of electron–hole pairs. Therefore, heterostructure nanomaterials display better electrochemical characteristics including high conductivity, large specific capacitance, extended cycle stability, high energy and power densities, etc.…”