Record high field‐effect mobility (µFE) thin film transistors (TFTs) based on 5 and 7 nm thickness SnON channel layer is reported. The SnON TFT device with 7.6% nitrogen content achieves a record high µFE of 299 cm2 V−1 s−1 at 7 nm thickness and 277 cm2 V−1 s−1 at 5 nm thickness, compared to SnO2 with µFE of 211 cm2 V−1 s−1. At the same 5 nm quasi‐2D channel thickness, this µFE of nanocrystalline SnON transistor is comparable to single crystalline Si and InGaAs metal oxide semiconductor field‐effect transistor (MOSFET) and also higher than the phonon‐scattering‐limited 2D MoS2 FET. From the principle of quantum‐mechanical calculation, the high µFE of nanosheet SnON TFT is due to lower effective mass of electrons, 0.29 m0 in the conduction band in contrast to 0.41 m0 of SnO2. SnON can reduce the defect trap densities by introducing non‐oxide anions where the valence band can be controlled to remove or passivate the oxygen vacancy levels by substitutional alloying with nitrogen anions to circumvent instability, increase on‐current (ION) and improve the µFE. It is highly expected that the high performance quasi‐2D nanosheet SnON TFTs will be utilized in embedded DRAM and monolithic 3D integrated circuits (ICs).
Pheiroijam pooja & Chinnamuthu p. ✉ tio 2 /in 2 o 3 nanowire (NW) array are prepared using catalyst free glancing angle deposition technique. The wettability of TiO 2 /in 2 o 3 NW surface are tuned and controlled by the annealing treatment without altering the surface with additional chemical coating. The phase change, surface roughness, change in static and dynamic contact angles due to the heat treatment are studied. Moreover, the surface properties such as frictional force and work of adhesion are calculated for all the samples. The samples annealed at 600 °C shows nearly superhydrophilic with static water contact angle of 12°, frictional force of 85.00748 µN and work of adhesion of 142.3721 mN/m. The surface of TiO 2 /in 2 o 3 NW is controlled to attain desired water contact angles and sliding angles, which is paramount for designing practical application in self-cleaning, electronic and biomedical fields. Surfaces with superhydrophilic wetting nature have been used in numerous applications such as anti-fogging, self-cleaning coatings and tissue reconstruction 1-5. Controlling the wettability of surface is desirable in various technical applications. In recent years, efforts have been made to improve the hydrophilicity of thin films. There are works on improvement of hydrophilicity using UV illumination of metaloxide films such as TiO 2 , SnO 2 and ZnO either doping by metal or non-metal 6,7. However, there are limitations in the application of these metal oxides for use as a reliable superhydrophilic coating and thus need to be checked. For practical application, surface of the film cannot be illuminated with UV light all the time and there is need of long lasting hydrophilicity in absence of UV illumination for anti-fogging surfaces, specifically in outdoor applications. We have reported on designing vertical stacked coaxial TiO 2-In 2 O 3 heterostructure nanowire (NW) , which studies on photoinduced hydrophilicity after UV-illumination 8. There are also reports on hydrophobic to hydrophilic conversion using surface derivatization, chemical grafting, wet chemical reactions and also modifying hydrophobic cross linked high internal phase emulsion polymer (polyHIPE) using styrene 9-11. Problems associated with these techniques are difficulties in implementation, high cost, polymer degradation possibility and scale up issues for large industrial production. There is no report on study of tuning the wettability of coaxial TiO 2-In 2 O 3 NW from hydrophobic to hydrophilic through simple heat treatment. Moreover, before TiO 2 /In 2 O 3 NWs are utilized successfully, annealing is necessary to improve the NWs crystallinity. During elevated annealing temperature, the solid-state sintering of TiO 2 nanostructure subsequently causes structure breakdown. Such results are more noticeable when there is enhanced mass transport and bond breaking during phase transformation from anatase to rutile 12,13. In case of In 2 O 3 , at elevated annealing temperature the grain stops growing or exhibits amorphous nature 14,15. Therefo...
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