Sulfur vacancy (SV) engineering is an evolving approach to improve the performance of metal sulfides for hydrogen evolution reactions (HER); however, a simple and universal method for creating SV is still missing; thus, the catalytic role of SV in elemental steps of HER remains unclear. Here, we develop a facial hydrothermal process employing hydrochloride acid as the sulfur etching agent to synthesize high-performance MoS 2 -based electrocatalysts. Surface vacancy-engineered MoS 2 shows a 32-fold enhancement in HER compared to pristine MoS 2 , owing to the promoted desorption of hydrogen atoms. This strategy is also applicable for the development of other metal sulfides. Vacancy-engineered CoMoS 2 displays a η 10mA of −0.23 V vs the reversible hydrogen electrode (RHE) and outperforms the Pt electrode at high current density owing to the optimized desorption of hydrogen.