Superconductivity in a new layered bismuth oxyselenide: LaO0.5F0.5BiSe2

Krztoń‐Maziopa, A.; Guguchia, Zurab; Pomjakushina, E.; Pomjakushin, Vladimir; Khasanov, R.; Luetkens, H.; Biswas, P. K.; Amato, A.; Keller, H.; Conder, K.

doi:10.1088/0953-8984/26/21/215702

Cited by 77 publications

(89 citation statements)

References 28 publications

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“…Well-known examples are cuprate and iron-pnictide superconductors, where the relationship between the superconductivity and charge/spin degrees of freedom in the superconducting planes are still in hot debate [1,2]. Recent discovery of a series of Bi-dichalcogenide layered superconductors [3][4][5][6][7][8][9][10][11][12], Bi 4 O 4 (S,Se) 3 and (Ln,Sr)(O,F)Bi(S,Se) 2 where Ln denotes lanthanoid atoms, has provided a new field of two-dimensional superconductivity with manifested spin-orbital coupling [13,14]. Among them, LaO 1−x F x BiS 2 exhibits the maximum superconducting transition temperature (T c ) of 10.6 K at x ∼ 0.5 upon pressure [4].…”

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confidence: 99%

Proximity to Fermi-surface topological change in superconductingLaO0.54F0.46BiS2

et al. 2014

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The electronic structure of nearly optimally doped novel superconductor LaO 1−x F x BiS 2 (x = 0.46) was investigated using angle-resolved photoemission spectroscopy (ARPES). We clearly observed band dispersions from 2 to 6 eV binding energy and near the Fermi level (E F ), which are well reproduced by first-principles calculations when the spin-orbit coupling is taken into account. The ARPES intensity map near E F shows a squarelike distribution around the (Z) point in addition to electronlike Fermi-surface (FS) sheets around the X(R) point, indicating that FS of LaO 0.54 F 0.46 BiS 2 is in close proximity to the theoretically predicted topological change.

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confidence: 99%

Proximity to Fermi-surface topological change in superconductingLaO0.54F0.46BiS2

et al. 2014

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“…Especially, Rn(O,F)BiS2 shows similarity to the crystal structure of superconducting R(O,F)FeAs (1111) [21], and S-site can be substituted by Se, which also becomes superconductive [53]. In contrast, substitution of Sb in Bi sites depress superconductivity.…”

Section: Bis2-based Superconductorsmentioning

confidence: 93%

Crystal Growth Techniques for Layered Superconductors

Nagao¹

2017

Preprint

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Layered superconductors are attractive because some of them show high critical temperatures. While their crystal structures are similar, those compounds are composed of many elements. Compounds with many elements tend to be incongruent melting compounds, thus, their single crystals cannot be grown via the melt-solidification process. Hence, these single crystals have to be grown below the decomposition temperature, and then the flux method, a very powerful tool for the growth of these single crystals with incongruent melting compounds, is used. This review shows the flux method for single-crystal growth technique by self-flux, chloride-based flux, and HPHT (high-pressure and high-temperature) flux method for many-layered superconductors: high-Tc cuprate, Fe-based and BiS2-based compounds.Keywords: single crystal growth; incongruent melting compound; flux method Crystal Growth of Layered SuperconductorsThis review presents the single-crystal growth of high-Tc cuprate, Fe-based and BiS2-based superconductors as typical layered superconductors. Those layered superconductors form many analogous compounds and show other interesting properties. Additionally, layered superconductors have high anisotropy. In order to reveal such intrinsic properties, their single crystals are necessary. However, layered superconductors are composed of multiple elements and they are incongruent melting compounds. This suggests that the growth of single crystals cannot use the melt-solidification process and, thus, the solution-growth process is necessary. During the single-crystal growth process, the temperature must be lower than the decomposition temperature of the layered superconductors. Hence, the flux method is useful for single-crystal growth of layered superconductors. In this review, the single-crystal growth technique for high-Tc cuprate, Fe-based and BiS2-based compounds using various fluxes are introduced. Single-Crystal Growth Techniques for Incongruent Melting CompoundsIn order to grow single crystals, their raw materials of layered superconductors have to become solution (liquid phase) below the decomposition temperatures of the products. The solvent of that solution (liquid phase) is called "flux". Flux plays a role as a solvent in the solution-growth process. Therefore, flux should be composed of low-melting compounds, such as metals, alkali chlorides, and other compounds with a eutectic composition. The conventional flux method, the traveling solvent floating-zone (TSFZ) method, the top-seeded solution growth (TSSG) method, and the high-pressure and high-temperature (HPHT) flux method are briefly explained in this chapter. The conventional flux method does not have to use a special apparatus, but obtained crystals are small. On the other hand, TSFZ and TSSG methods use special apparatuses which are expensive. However, these methods can grow large-sized crystals, and the HPHT flux method is necessary for single-crystal growth under high pressure.

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“…1) become superconductors after the doping of the conduction layers with an electron carrier [15][16][17][18][19][20][21][22][23][24][25][26][27][28]. On the other hand, superconductivity has not been observed after doping with a hole carrier [62].…”

Section: Emergence Of Superconductivity By Electron Dopingmentioning

confidence: 99%

“…Superconductors with a layered structure, such as cuprates and iron-based superconductors, are attractive materials because they sometimes exhibit a high superconducting transition temperature (Tc) and/or an unconventional superconducting mechanism [1][2][3][4][5][6][7][8][9][10][11][12][13]. Further, BiS 2 -based superconductors have a layered structure [14][15][16][17][18][19][20][21][22][23][24][25][26][27][28]. Therefore, a number of researchers have investigated these materials.…”

Section: Introductionmentioning

confidence: 99%

“…This suggests it should be possible to turn layered compounds with layers of BiS 2 into superconductors by doping them with an electron carrier. The other parent materials are LnOBiS 2 (Ln = La, Ce, Pr, Nd, Sm, Yb, and Bi), which have a crystal structure composed of alternating stacks of BiS 2 conduction layers and LnO-type block layers [15][16][17][18][19][20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

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Evolution of superconductivity and magnetism in BiS2-based layered compounds

Demura¹

2016

Novel Superconducting Materials

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BiS 2 -based compounds constitute a new family of layered superconductors. In this article, several experimental findings on the superconductivity and related properties of the BiS 2 family are reviewed. In particular, the focus is on the conditions required for the emergence of superconductivity and higher superconducting transition temperature in the BiS 2 family: it is shown that optimizing the electron doping and crystal structure are important. Further, a few notable characteristics such as the coexistence of superconductivity and magnetism as well as the relation between the superconductivity and chargedensity-wave instability are introduced in brief.

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Superconductivity in a new layered bismuth oxyselenide: LaO_0.5F_0.5BiSe₂

Cited by 77 publications

References 28 publications

Proximity to Fermi-surface topological change in superconductingLaO0.54F0.46BiS2

Proximity to Fermi-surface topological change in superconductingLaO0.54F0.46BiS2

Crystal Growth Techniques for Layered Superconductors

Evolution of superconductivity and magnetism in BiS2-based layered compounds

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