2020
DOI: 10.1016/j.cap.2020.02.020
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Superconducting quantum interference devices made of Sb-doped Bi2Se3 topological insulator nanoribbons

Abstract: We report the fabrication and characterization of superconducting quantum interference devices (SQUIDs) made of Sb-doped Bi 2 Se 3 topological insulator (TI) nanoribbon (NR) contacted with PbIn superconducting electrodes. When an external magnetic field was applied along the NR axis, the TI NR exhibited periodic magneto-conductance oscillations, the so-called Aharonov-Bohm oscillations, owing to one-dimensional subbands. Below the superconducting transition temperature of PbIn electrodes, we observed supercurr… Show more

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Cited by 8 publications
(5 citation statements)
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“…Meanwhile, the ensemble-averaged FFT spectrum can be used to identify the electrical transport regime of the TI NRs at an arbitrary disorder strength. We expect the channel-length-dependent topological quantum interferometers of the TI NR to be useful for investigating various features of topological quantum devices combined with superconductivity, , ferromagnetism, , or nanomechanics …”
Section: Results and Discussionmentioning
confidence: 99%
“…Meanwhile, the ensemble-averaged FFT spectrum can be used to identify the electrical transport regime of the TI NRs at an arbitrary disorder strength. We expect the channel-length-dependent topological quantum interferometers of the TI NR to be useful for investigating various features of topological quantum devices combined with superconductivity, , ferromagnetism, , or nanomechanics …”
Section: Results and Discussionmentioning
confidence: 99%
“…So, one can expect Sb to replace Bi atoms due to their similarity in stable oxidation states. Since the ratio of ionic radii: r(Bi 3+ )/r(Sb 3+ ) ≈ 1.56, we expect no significant strain-induced change in topological properties in Sb-doped Bi 1 Te 1 , as evident from the symmetry mode analysis of the parent and undoped crystals [42][43][44]. Rather electrical transport described later, proves that Sb helps to reduce and compensate the unwanted bulk defects.…”
Section: Structural Characterizationmentioning
confidence: 73%
“…We have realized Josephson junctions using Bi 2 Se 3 nanobelts, grown by physical vapor deposition, which are at least 7-8 µm long to be able to fabricate both the test and reference junction on the same nanobelt [17,26]. The fabrication process involves the dry transfer of nanobelts to a SiO 2 /Si substrate followed by electron beam lithography and metallization.…”
Section: Methodsmentioning
confidence: 99%