Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition

Ziegler, Mario; Fritzsch, L.; Day, Julia J.; Linzen, S.; Anders, S.; Toussaint, J.; Meyer, H.‐G.

doi:10.1088/0953-2048/26/2/025008

Cited by 41 publications

(28 citation statements)

References 25 publications

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“…Previously, ALD TiN films were reported for the application in SNSPDs [14]. In our earlier work, the deposition of superconducting NbN thin films using metal-organic plasma-enhanced atomic layer deposition (PEALD) has been shown [15][16][17]. Here, we investigate the suitability of these films for detector applications and demonstrate first SNSPDs and their properties.…”

Section: Introductionmentioning

confidence: 89%

Nanowire single-photon detectors made of atomic layer-deposited niobium nitride

Knehr¹,

Kuzmin²,

Vodolazov³

et al. 2019

Supercond. Sci. Technol.

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We demonstrate and characterize first superconducting nanowire single-photon detectors (SNSPDs) made from atomic layer-deposited (ALD) NbN layers. To assess the suitability of these films as a detector material, transport properties of bare films and bridges of different dimensions and thicknesses are investigated. Similar ratios of the measured critical current to the depairing current are obtained for micro-bridges made from ALD and sputtered NbN films. Furthermore, we characterized the single-photon response for 5 and 10 nmthick nanowire detectors. A 100 nm-wide straight nanowire with a length of 5 µm exhibits saturated count-rate dependencies on bias current and a cut-off wavelength in the near-infrared range. The ALD technique could open up the possibility to fabricate NbN-based detectors on the wafer scale and to conformally cover also non-planar surfaces for novel device concepts.

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Section: Introductionmentioning

confidence: 89%

Nanowire single-photon detectors made of atomic layer-deposited niobium nitride

Knehr¹,

Kuzmin²,

Vodolazov³

et al. 2019

Supercond. Sci. Technol.

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“…We find that the resistivity ratio, which is smaller than 1, decreases almost linearly from 0.98 to 0.89 as N 2 flow rate is increased from 1.4 sccm to 2.9 sccm. This kind of temperature dependence is commonly observed in polycrystalline NbN films [1][2][3][4][5][6][7][8][9] and often interpreted as grain-boundary scattering effect [3,4]. T c and normal state resistivity for all the NbN thin films studied in this work are summarized in Fig.…”

Section: Resultsmentioning

confidence: 51%

“…Higher transition temperature (T c ) of 17 K has been one of the advantages to use NbN in place of Nb. Most NbN films have been deposited by reactive magnetron sputtering in an Ar-N 2 mixture [1][2][3][4] but sometimes pulsed laser deposition [5] or atomic layer deposition method [6] was also used.…”

Section: Introductionmentioning

confidence: 99%

Transition temperatures and upper critical fields of NbN thin films fabricated at room temperature

Hwang¹,

Kim²

2015

Progress in Superconductivity and Cryogenics

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NbN thin films were deposited on thermally oxidized Si substrate at room temperature by using reactive magnetron sputtering in an Ar-N 2 gas mixture. Total sputtering gas pressure was fixed while varying N 2 flow rate from 1.4 sccm to 2.9 sccm. X-ray diffraction pattern analysis revealed dominant NbN(200) orientation in the low N 2 flow rate but emerging of (111) orientation with diminishing (200) orientation at higher flow rate. The dependences of the superconducting properties on the N 2 gas flow rate were investigated. All the NbN thin films showed a small negative temperature coefficient of resistance with resistivity ratio between 300 K and 20 K in the range from 0.98 to 0.89 as the N 2 flow rate is increased. Transition temperature showed non-monotonic dependence on N 2 flow rate reaching as high as 11.12 K determined by the mid-point temperature of the transition with transition width of 0.3 K. On the other hand, the upper critical field showed roughly linear increase with N 2 flow rate up to 2.7 sccm. The highest upper critical field extrapolated to 0 K was 17.4 T with corresponding coherence length of 4.3 nm. Our results are discussed with the granular nature of NbN thin films.

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“…A prospective molecular precursor for NbN deposition is (tert-butylimido)-tris (diethylamino)-niobium(V) (TBTDEN), which can be combined with H 2 plasma [14,15].…”

Section: Introductionmentioning

confidence: 99%

Improved critical temperature of superconducting plasma-enhanced atomic layer deposition of niobium nitride thin films by thermal annealing

et al. 2020

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The efficiency of the superconducting radio frequency cavities composed of Nb required the deposition of thickness-controlled multilayer coatings of superconductor-insulator-superconductor (S-IS) on the internal surfaces of the cavities. Herein, we report the plasma-enhanced atomic layer deposition of carbon-free NbN (50 µm thick), followed by a thermal treatment, to obtain the superconducting layer in the S-IS structure. Using (tert-butylimido)-tris(diethylamino)-niobium as the niobium precursor and H 2 and NH 3 plasma as reactive gases, the deposition and annealing parameters were optimized by studying their effects on the film properties (crystallinity, density, and composition). We demonstrated that the superconducting critical temperature (Tc) can be improved after thermal annealing up to 13.8 K, a value compatible with the targeted application. In addition to the expected densified layers and increased grain size, we observed a partial transformation of the oxide present in the as-deposited layer into niobium oxynitride, which could indicate the origin of the improvement of the superconducting properties. With low carbon and oxygen impurity concentrations in the films, this study contributes to the understanding of the relationship between the structure, composition, and superconductivity in NbN.

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Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition

Cited by 41 publications

References 25 publications

Nanowire single-photon detectors made of atomic layer-deposited niobium nitride

Nanowire single-photon detectors made of atomic layer-deposited niobium nitride

Transition temperatures and upper critical fields of NbN thin films fabricated at room temperature

Improved critical temperature of superconducting plasma-enhanced atomic layer deposition of niobium nitride thin films by thermal annealing

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