Superconducting Hot Electron Bolometers and Transition Edge Sensors

Pepe, Giovanni Piero; Cristiano, R.; Gatti, F.

doi:10.1002/3527600434.eap780

Cited by 2 publications

(3 citation statements)

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“…Worth mentioning is the development of quantum non-demolition detectors for either cavity [8,27] or itinerant [13,14] photons, which require no absorption and preserve the photon number [1]. Superconducting transition-edge sensors operating as bolometers show sharp resistance increase upon the absorption of photons [28]. These devices typically work at frequencies above THz, but extensions at frequencies down to 90 GHz are in progress [26].…”

Section: State Of the Artmentioning

confidence: 99%

“…These devices typically work at frequencies above THz, but extensions at frequencies down to 90 GHz are in progress [26]. Additionally, superconducting hot electron bolometers are operated above 300 GHz [28]. Detection schemes based on opto-electro-mechanical systems using mechanical resonators with coupled microwave and optical cavities have also been theoretically proposed [29][30][31].…”

Section: State Of the Artmentioning

confidence: 99%

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Microwave Photon Detectors Based on Semiconducting Double Quantum Dots

Ghirri

Cornia

Affronte

2020

Sensors

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Detectors of microwave photons find applications in different fields ranging from security to cosmology. Due to the intrinsic difficulties related to the detection of vanishingly small energy quanta ℏ ω , significant portions of the microwave electromagnetic spectrum are still uncovered by suitable techniques. No prevailing technology has clearly emerged yet, although different solutions have been tested in different contexts. Here, we focus on semiconductor quantum dots, which feature wide tunability by external gate voltages and scalability for large architectures. We discuss possible pathways for the development of microwave photon detectors based on photon-assisted tunneling in semiconducting double quantum dot circuits. In particular, we consider implementations based on either broadband transmission lines or resonant cavities, and we discuss how developments in charge sensing techniques and hybrid architectures may be beneficial for the development of efficient photon detectors in the microwave range.

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Section: State Of the Artmentioning

confidence: 99%

Section: State Of the Artmentioning

confidence: 99%

Microwave Photon Detectors Based on Semiconducting Double Quantum Dots

Ghirri

Cornia

Affronte

2020

Sensors

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“…Using EM multimode horns to collect large microwave power, they can achieve better signal-to-noise ratio than single mode bolometers, but they need to work at higher temperatures. In fact, considering that the average optical power is about 10 pW and the thermal conductance G must be ≥ 50 pW/K, to meet the bolometer time constant requirement τ 10 ms, it is necessary a TC ≃ 500 mK [4], [5]. It has been reported that titanium TES have TC as high as 0.6 K, but it is strongly dependent on fabrication processes and substrates [6]- [9].…”

Section: Introductionmentioning

confidence: 99%

Impact of Annealing on T_C and Structure of Titanium Thin Films

Siri

Celasco

Barusso

et al. 2021

IEEE Trans. Appl. Supercond.

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Transition-edge sensors (TES) are superconducting devices used for detecting particles and electromagnetic radiation, ranging from γ-ray to mm wavelengths. A fundamental parameter for operations of TES detectors for the desired application is the superconducting critical temperature TC. We are developing TES based bolometers made of metallic Ti films, with an operating temperature of 500 mK, to be used for cosmic microwave background (CMB) measurements. We have observed that electronbeam evaporation grown Ti films can reach critical temperatures higher than 500 mK when the substrate temperature is kept below some temperature threshold. Discordant critical temperatures of Titanium TES are found in literature and very little information is available about the various TC and relative fabrication process. Critical temperature of Ti films is generally known to be affected by deposition methods, substrates, processing conditions and heating. In the past we tried to tune the critical temperature of titanium thin films by means of post-annealing and we found a regular decrease of TC from 540 mK to 360 mK, in this work we confirm this effect. Further, we have found that titanium film grows with a most stable hcp structure. The annealing process until 260 °C, does not modify the morphological features of the film. We find also evidences of a shift in XRD peaks that indicate structural changes of the lattice parameters, which could play a role in the TC modification.

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Superconducting Hot Electron Bolometers and Transition Edge Sensors

Abstract: The article contains sections titled: Introduction The Energy Scenario and Timescales The Hot Electron Bolometer Transition Edge Sensor The Main Physical Parameters Recent Achievements

Cited by 2 publications

References 78 publications

Microwave Photon Detectors Based on Semiconducting Double Quantum Dots

Microwave Photon Detectors Based on Semiconducting Double Quantum Dots

Impact of Annealing on T_C and Structure of Titanium Thin Films

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Superconducting Hot Electron Bolometers and Transition Edge Sensors

Abstract: The article contains sections titled: Introduction The Energy Scenario and Timescales The Hot Electron Bolometer Transition Edge Sensor The Main Physical Parameters Recent Achievements

Cited by 2 publications

References 78 publications

Microwave Photon Detectors Based on Semiconducting Double Quantum Dots

Microwave Photon Detectors Based on Semiconducting Double Quantum Dots

Impact of Annealing on TC and Structure of Titanium Thin Films

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Impact of Annealing on T_C and Structure of Titanium Thin Films