Microwave Photon Detectors Based on Semiconducting Double Quantum Dots

Ghirri, Alberto; Cornia, Samuele; Affronte, Marco

doi:10.3390/s20144010

Cited by 13 publications

(6 citation statements)

References 115 publications

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“…The ability to detect single electrons in the solid state is useful for a variety of applications, including spin qubit readout [1][2][3][4], electrical current and capacitance standards [5,6], studying cooper pair breaking [7][8][9], single-shot photodetection [10][11][12][13], and nanothermodynamics and fluctuations [14][15][16][17][18][19]. While many methods exist to detect charge, one of the main ways are by utilizing quantum dots (QD).…”

Section: Introductionmentioning

confidence: 99%

Quantum Dot Source-Drain Transport Response at Microwave Frequencies

Havir¹,

Haldar²,

Khan³

et al. 2023

Preprint

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Quantum dots are frequently used as charge sensitive devices in low temperature experiments to probe electric charge in mesoscopic conductors where the current running through the quantum dot is modulated by the nearby charge environment. Recent experiments have been operating these detectors using reflectometry measurements up to GHz frequencies rather than probing the low frequency current through the dot. In this work, we use an on-chip coplanar waveguide resonator to measure the source-drain transport response of two quantum dots at a frequency of 6 GHz, further increasing the bandwidth limit for charge detection. Similar to the low frequency domain, the response is here predominantly dissipative. For large tunnel coupling, the response is still governed by the low frequency conductance, in line with Landauer-Büttiker theory. For smaller couplings, our devices showcase two regimes where the high frequency response deviates from the low frequency limit and Landauer-Büttiker theory: When the photon energy exceeds the quantum dot resonance linewidth, degeneracy dependent plateaus emerge. These are reproduced by sequential tunneling calculations. In the other case with large asymmetry in the tunnel couplings, the high frequency response is two orders of magnitude larger than the low frequency conductance G, favoring the high frequency readout.

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Section: Introductionmentioning

confidence: 99%

Quantum Dot Source-Drain Transport Response at Microwave Frequencies

Havir¹,

Haldar²,

Khan³

et al. 2023

Preprint

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“…The detection of photons of such small energy requires detectors operated at ultra low temperatures, to suppress the thermal background, and several precautions have to be taken into account in order to preserve the system from phonon coupling and any other source of noise. While several systems and methods have been proposed for the detection of MW radiation in different regimes, [ 8 ] still no universal approach is available. Conversely, the materials, architectures and active mechanisms exploited in MW detectors may strongly depend on the targeted application.…”

Section: Introductionmentioning

confidence: 99%

Calibration‐Free and High‐Sensitivity Microwave Detectors Based on InAs/InP Nanowire Double Quantum Dots

Cornia

Demontis

Zannier

et al. 2023

Adv Funct Materials

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At the cutting‐edge of microwave detection technology, novel approaches which exploit the interaction between microwaves and quantum devices are rising. In this study, microwaves are efficiently detected exploiting the unique transport features of InAs/InP nanowire double quantum dot‐based devices, suitably configured to allow the precise and calibration‐free measurement of the local field. Prototypical nanoscale detectors are operated both at zero and finite source‐drain bias, addressing and rationalizing the microwave impact on the charge stability diagram. The detector performance is addressed by measuring its responsivity, quantum efficiency and noise equivalent power that, upon impedance matching optimization, are estimated to reach values up to ≈2000 A W−1, 0.04 and ≈10−16normalW/Hz${10^{ - 16}}{\rm{W}}/\sqrt {Hz} $, respectively. The interaction mechanism between the microwave field and the quantum confined energy levels of the double quantum dots is unveiled and it is shown that these semiconductor nanostructures allow the direct assessment of the local intensity of the microwave field without the need for any calibration tool. Thus, the reported nanoscale devices based on III‐V nanowire heterostructures represent a novel class of calibration‐free and highly sensitive probes of microwave radiation, with nanometer‐scale spatial resolution, that may foster the development of novel high‐performance microwave circuitries.

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“…In this circumstance, the SET-based sensors could also reveal the higher sensitivity than that of Nanomaterials 2022, 12, 603 2 of 10 complementary metal-oxide-semiconductor (CMOS)-based sensors, because in the SET, the conductance values at the CBO peaks and valleys (i.e., on-and off-tunneling states) are also precisely controllable by changing the gate and/or the drain bias voltages [23]. Owing to such an astonishing physical mechanism, the electric current standard device [24], the thermometers [25,26], the charge sensors [16][17][18][19], the photon detectors [27,28], the ion sensors [29,30], and the mechanical displacement detectors [1][2][3] were conceived and reported as feasible applications of the SET-based sensors.…”

Section: Introductionmentioning

confidence: 99%

Reduced Electron Temperature in Silicon Multi-Quantum-Dot Single-Electron Tunneling Devices

Lee

Son

2022

Nanomaterials

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The high-performance room-temperature-operating Si single-electron transistors (SETs) were devised in the form of the multiple quantum-dot (MQD) multiple tunnel junction (MTJ) system. The key device architecture of the Si MQD MTJ system was self-formed along the volumetrically undulated [110] Si nanowire that was fabricated by isotropic wet etching and subsequent oxidation of the e-beam-lithographically patterned [110] Si nanowire. The strong subband modulation in the volumetrically undulated [110] Si nanowire could create both the large quantum level spacings and the high tunnel barriers in the Si MQD MTJ system. Such a device scheme can not only decrease the cotunneling effect, but also reduce the effective electron temperature. These eventually led to the energetic stability for both the Coulomb blockade and the negative differential conductance characteristics at room temperature. The results suggest that the present device scheme (i.e., [110] Si MQD MTJ) holds great promise for the room-temperature demonstration of the high-performance Si SETs.

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Microwave Photon Detectors Based on Semiconducting Double Quantum Dots

Cited by 13 publications

References 115 publications

Quantum Dot Source-Drain Transport Response at Microwave Frequencies

Quantum Dot Source-Drain Transport Response at Microwave Frequencies

Calibration‐Free and High‐Sensitivity Microwave Detectors Based on InAs/InP Nanowire Double Quantum Dots

Reduced Electron Temperature in Silicon Multi-Quantum-Dot Single-Electron Tunneling Devices

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