2005
DOI: 10.1364/ol.30.002433
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Superbroadband 1310 nm emission from bismuth and tantalum codoped germanium oxide glasses

Abstract: Near-infrared broadband emission from bismuth-tantalum-codoped germanium oxide glasses was observed at room temperature when the glasses were pumped by an 808 nm laser diode. The emission band covered the O, E, S, C, and L bands (1260-1625 nm), with a maximum peak at approximately 1310 nm, a FWHM broader than 400 nm, and a lifetime longer than 200 micros. The observed broadband luminescence was attributed to bismuth clusters in the glasses. Bismuth-tantalum-codoped germanium oxide glass might be promising as a… Show more

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Cited by 216 publications
(163 citation statements)
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“…Moreover, the amplification gain is proportional to the value of · em ©¸, and the laser oscillation threshold is inversely proportional. 57) In our research, the values of FWHM and¸in Bi/Ni GCs were simultaneously enhanced compared with those of co-doped glass, indicating its promising application as an excellent gain medium for tunable lasers and fiber amplifiers.…”
Section: Bi/ni Co-doped Gcs For Bandwidth Engineeringsupporting
confidence: 54%
“…Moreover, the amplification gain is proportional to the value of · em ©¸, and the laser oscillation threshold is inversely proportional. 57) In our research, the values of FWHM and¸in Bi/Ni GCs were simultaneously enhanced compared with those of co-doped glass, indicating its promising application as an excellent gain medium for tunable lasers and fiber amplifiers.…”
Section: Bi/ni Co-doped Gcs For Bandwidth Engineeringsupporting
confidence: 54%
“…A wide variety of traditional glass hosts containing Bi have been investigated so far, mainly silicates [1][2][3] and germanates [4][5][6] but also phosphates [7] and borates [8]. The product of the emission cross section and lifetime (σ em τ), which is inversely proportional to the laser threshold, has often been calculated and is usually found to be considerably higher than traditional laser materials such as Ti:sapphire.…”
Section: Introductionmentioning
confidence: 99%
“…The center of the emission bands is located at 1280 nm, and the FWHM of the emissions is about 270 nm. The ultrabroadband emissions have been attributed to electronic transitions of low valence Bi or Bi clusters [30][31][32][33], but the exact origin would need further investigation. Furthermore, when excited at 808 nm, the ultrabroadband emission intensity of Bi first increases as the doping concentration of Bi 2 O 3 is increased, reaching a maximum at 3.5 mol% Bi 2 O 3 doping, and then decreases when the Bi 2 O 3 content is further increased.…”
Section: Resultsmentioning
confidence: 99%