Super-resolution Optical Spectroscopy of Nanoscale Emitters within a Photonic Atom Probe

Russo, Enrico Di; Dalapati, Pradip; Houard, Jonathan; Venturi, Linda; Blum, Ivan; Moldovan, Simona; Biavan, Nolwenn Le; Lefebvre, Denis; Hugues, Maxime; Chauveau, Jean Michel; Blavette, D.; Déconihout, B.; Vella, A.; Vurpillot, F.; Rigutti, Lorenzo

doi:10.1021/acs.nanolett.0c03584

Cited by 9 publications

(8 citation statements)

References 24 publications

(40 reference statements)

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“…The 3D reconstructed volume of the analyzed system is visualized in Fig. 3 in the section on preliminary TEM characterization and in previous works [16,22]. This phenomenon is reproduced through the depth of the analyzed volume in Fig.…”

Section: D Reconstructionmentioning

confidence: 53%

“…The sawtooth profile is visible when the observation is performed along the polar [0001] direction (c-direction, z axis for the strain/stress tensors) [22]. The [11][12][13][14][15][16][17][18][19][20] adirection corresponds to the y axis for the strain/stress tensors. The orientation of the crystal is also visualized in Fig.…”

Section: Tip Specimen Preliminary Characterization and Crystal Orient...mentioning

confidence: 99%

“…This has recently been shown to enable super-resolution optical spectroscopy, as spectral signatures of closely-lying emitters can be discriminated. This possibility is not exploited in this work, in which a single emitter is studied [16]. PL has also been collected during a slow initial voltage ramp, with steps at a set of bias values, in order to obtain complementary information on the field-induced strain [26,27].…”

Section: Directions In the Tip Reference Framementioning

confidence: 99%

“…In this contribution, we report about an original way to access to the stress state of nanoscale field ion emitters through the use of a photonic atom probe (PAP) [15,16], whose principles are schematically illustrated in fig. 1.…”

Section: Introductionmentioning

confidence: 99%

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In Situ Spectroscopic Study of the Optomechanical Properties of Evaporating Field Ion Emitters

et al. 2021

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The possibility of measuring in-situ, operando photoluminescence spectroscopy within a photonic atom probe allows for real time study of the mechanical stress state within a field emitter either statically, as a function of the field-induced tensile stress or dynamically, as a result of the evolution of the shape of the emitter upon its evaporation. The dynamic evolution results from the relaxation of the strain induced by lattice mismatch and by the propagation of the stress from the apex while the morphology of the field emitter changes. The optomechanical information can be interpreted through the three-dimensional atomic scale images of the chemical composition of the emitter obtained through standard atom probe analysis. In the present work, the photoluminescence signal of a ZnO/(Mg,Zn)O quantum well allows for the local measurement of strain within the well and of the electrostatic field applied to the apex of the nanoscale field emitter.

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Section: D Reconstructionmentioning

confidence: 53%

Section: Tip Specimen Preliminary Characterization and Crystal Orient...mentioning

confidence: 99%

Section: Directions In the Tip Reference Framementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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In Situ Spectroscopic Study of the Optomechanical Properties of Evaporating Field Ion Emitters

et al. 2021

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“…The presence of the Zn and O EELS peaks indicated that the grain was composed of ZnO; the Al signal observed in the cluster structure confirmed the presence of the metal atoms inside the grain, suggesting that the sputtered material was, in fact, AZO and not simple ZnO, even at this low deposition thickness. This result was surprising, as the small size of the AZO clusters and the small amount of dopant made their characterization difficult; it is also statistically possible to find undoped nanostructures [ 28 , 29 , 30 , 31 , 32 , 33 ]. Based on findings in the literature, the Al signal at 78 eV in Figure 2 d can be ascribed to the Al-O bond, as expected for the Al-doped ZnO, which presents an atomic structure where the Al 3+ ions substitute Zn 2+ ions in the lattice [ 26 , 34 , 35 ].…”

Section: Resultsmentioning

confidence: 99%

Early Stages of Aluminum-Doped Zinc Oxide Growth on Silicon Nanowires

et al. 2022

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Aluminum-doped zinc oxide (AZO) is an electrically conductive and optically transparent material with many applications in optoelectronics and photovoltaics as well as in the new field of plasmonic metamaterials. Most of its applications contemplate the use of complex and nanosized materials as substrates onto which the AZO forms the coating layer. Its morphological characteristics, especially the conformality and crystallographic structure, are crucial because they affect its opto-electrical response. Nevertheless, it was difficult to find literature data on AZO layers deposited on non-planar structures. We studied the AZO growth on silicon-nanowires (SiNWs) to understand its morphological evolution when it is formed on quasi one-dimensional nanostructures. We deposited by sputtering different AZO thicknesses, leading from nanoclusters until complete incorporation of the SiNWs array was achieved. At the early stages, AZO formed crystalline nano-islands. These small clusters unexpectedly contained detectable Al, even in these preliminary phases, and showed a wurtzite crystallographic structure. At higher thickness, they coalesced by forming a conformal polycrystalline shell over the nanostructured substrate. As the deposition time increased, the AZO conformal deposition led to a polycrystalline matrix growing between the SiNWs, until the complete array incorporation and planarization. After the early stages, an interesting phenomenon took place leading to the formation of hook-curved SiNWs covered by AZO. These nanostructures are potentially very promising for optical, electro-optical and plasmonic applications.

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Surface Microscopy of Atomic and Molecular Hydrogen from Field-Evaporating Semiconductors

et al. 2021

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We report on the microscopic behavior of residual hydrogen on nanometric field emitters. By using homogeneous or heterostructured semiconductor specimens analyzed in a laser-assisted atom probe, it is possible to study how the relative abundances of the ionic species H+, H2 +, and H3 + depend on the microscopic electric field, estimated through post-ionization statistics. In the case of Ga-containing semiconductors, the relative abundances of H+, H2 +, and H3 + follow a common trend, independent of the nonmetallic component of the matrix. The dependence of the total H flux on the electric field exhibits a more complex behavior, which depends also on the spatial direction of the variation of the field (in-depth or on-surface). The analysis of multiple detection events provides further insights into surface chemistry. Noticeably, H+–H3 + ion pairs are both correlated in number and separated by very small distances on the detector space, suggesting a possible reaction 2H2 → H3 ++H++2e– taking place on the field emitter surface.

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Super-resolution Optical Spectroscopy of Nanoscale Emitters within a Photonic Atom Probe

Cited by 9 publications

References 24 publications

In Situ Spectroscopic Study of the Optomechanical Properties of Evaporating Field Ion Emitters

In Situ Spectroscopic Study of the Optomechanical Properties of Evaporating Field Ion Emitters

Early Stages of Aluminum-Doped Zinc Oxide Growth on Silicon Nanowires

Surface Microscopy of Atomic and Molecular Hydrogen from Field-Evaporating Semiconductors

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