We
report on the microscopic behavior of residual hydrogen on nanometric
field emitters. By using homogeneous or heterostructured semiconductor
specimens analyzed in a laser-assisted atom probe, it is possible
to study how the relative abundances of the ionic species H+, H2
+, and H3
+ depend
on the microscopic electric field, estimated through post-ionization
statistics. In the case of Ga-containing semiconductors, the relative
abundances of H+, H2
+, and H3
+ follow a common trend, independent of the nonmetallic
component of the matrix. The dependence of the total H flux on the
electric field exhibits a more complex behavior, which depends also
on the spatial direction of the variation of the field (in-depth or
on-surface). The analysis of multiple detection events provides further
insights into surface chemistry. Noticeably, H+–H3
+ ion pairs are both correlated in number and separated
by very small distances on the detector space, suggesting a possible
reaction 2H2 → H3
++H++2e– taking place on the field emitter surface.
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