Super-Resolution Near-Field Structure with Alternative Recording and Mask Materials

Abstract

Using a variety of recording materials, such as terbium-iron-cobalt (TbFeCo), tungsten (W), silver (Ag) and silver-zinc (Ag-Zn), the characteristics of super-resolution near-field structure (super-RENS) disks with the reactive diffusion (RD) recording mechanism were investigated. As a new mask material, WO x , which has a high transition temperature, was applied to a super-RENS disk. A combined W recording layer and WO x mask layer achieved much higher carrier-to-noise ratio (CNR), and better thermal stability, compared with AgO x light-scattering-type super-RENS disks.

Phase Change Materials and Their Application to Nonvolatile Memories

“…As the high aperture increases spatial resolution, bits of smaller sizes can be read and written, moving beyond the diffraction limit in air . Another technology takes advantage of the so-called Super-RENS (Super-resolution near-field structure) effect. – Here an optically nonlinear layer, e.g. Sb, is deposited on top of the recording layer.…”

“…164 Another technology takes advantage of the so-called Super-RENS (Super-resolution near-field structure) effect. [165][166][167][168] Here an optically nonlinear layer, e.g. Sb, is deposited on top of the recording layer.…”

Progress of super-resolution near-field structure in near-field optical storage technology

“…With the readout power of 5 mW, the CNR of recording marks of 100 nm surpassed 33 dB. In 2003, Kim et al reported that Super-RENS with WO x used as the mask layer could have higher transition temperature and better thermal stability compared to AgO x [14]. In addition, some other experiments reported that Bi could also be used as the mask material [15] and had similar properties with Sb type Super-RENS.…”

Z-Scan Study of Nonlinear Optical Coupling of PtOx and Ge2Sb2Te5 of Near-Field Optical Recording Structure

“…The as-deposited Sb thin film was first introduced by Tominaga et al as a near-field active layer in 1998, 1) and subsequently the metallic oxide active layers, such as AgO x , WO x , PdO x , PtO x , and ZnO x , were used to obtain high carrier-to-noise ratio (CNR) signals. [2][3][4][5] Nonlinear optical properties were observed in research on AgO x using near-field optical microscopy (NSOM) and the Z-scan method. 6,7) The enhancement in local optical intensity in a near field and the nonlinearity of such enhancement, which is related to a localized surface plasmon (LSP) have been studied and calculated using the finite differential time domain (FDTD) method.…”