Abstract:A novel step-oxide super junction-lateral double-diffused metal-oxide-semiconductor field-effect transistor (SOSJ-LDMOS) structure is proposed and optimised which allows the high breakdown voltage (BV) and low-specific on-resistance (R on,sp). The proposed structure overcomes the effect of thick field oxide formed by shallow trench isolation process in conventional buffer layer SJ-LDMOS (N-buffered SJ-LDMOS), effectively enhancing the performance of the SJ-LDMOS. Thanks to the SO layer, a new electric field pe… Show more
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