Super-flexible Sb2Se3 solar cell

Present Status and Future Perspective of Antimony Chalcogenide (Sb2X3) Photovoltaics

“…Li et al in 2018 demonstrated ultrathin, lightweight, and superflexible Sb 2 Se 3 solar cells, using a highly transparent and thermal resistant polyimide (PI) substrate. The transparent electrode ITO (∼250 nm) was deposited on top of glass/PI using sputtering.…”

“…Theoretical calculations predict optimized E g ∼ 1.34 eV for outdoor PVs and ∼1.9 eV for IPV solar cells . Building integrated photovoltaics (BIPVs), semitransparent electronics, wearable electronics, and flextronics are other key areas, where Sb 2 X 3 PVs can possibly outperform other PV technologies . Sb 2 S 3 exhibits suitable E g (∼1.8 eV), nontoxicity, long-term stability, and excellent low-light harvesting; thus, it is well suited for standalone IPVs .…”

“…65 Building integrated photovoltaics (BIPVs), semitransparent electronics, wearable electronics, and flextronics are other key areas, where Sb 2 X 3 PVs can possibly outperform other PV technologies. 76 Sb 2 S 3 exhibits suitable E g (∼1.8 eV), nontoxicity, long-term stability, and excellent low-light harvesting; thus, it is well suited for standalone IPVs. 77 With a slight improvement in PCE, the Sb 2 S 3 PV might be viable replacement for the a-Si PV in powering devices that require very low power, e.g., pocket calculators and wrist watches.…”

High-Efficiency Flexible Sb2Se3 Solar Cells by Back Interface and Absorber Bulk Deep-Level Trap Engineering

“…The unique 1D crystal structure also makes Sb 2 Se 3 tolerant to physical deformation upon bending, demonstrating its potential application in superior flexible devices. Theoretical calculations demonstrate that the fracture strain of Sb 2 Se 3 is as high as 28%. , Li et al constructed the first flexible Sb 2 Se 3 solar cells in a superstrate configuration on polyimide (PI) with the structure PI/ITO/CdS/Sb 2 Se 3 /Au, demonstrating a PCE of 5.9% with V OC , short-circuit current density ( J SC ), and fill factor (FF) of 0.419 V, 24.5% mA cm –2 , and 58%, respectively . These cells exhibit a great bending tolerance, retaining ∼98% of the original PCE value after 1000 bending cycles.…”

“…The poor transmittance of PI in the blue region of the spectrum causes a serious current loss and lowers the device PCE. A J SC loss as large as ∼4 mA cm –2 compared to the glass superstrate counterparts was observed. , Wen et al reduced the J SC loss by using a transfer process from a mica substrate, achieving a 7.15% efficiency …”