Efficient and stable flexible Sb2Se3 thin film solar cells enabled by an epitaxial CdS buffer layer

Wen, Xixing; Lu, Zonghuan; Wang, G.-C.; Washington, Morris; Lu, Toh‐Ming

doi:10.1016/j.nanoen.2021.106019

Cited by 33 publications

(25 citation statements)

References 41 publications

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“…We notice the only signi cant increase in current density indicating a movement of the electron-holes, on the other hand there is a decrease in the other characteristics. For this test the η CdS recorded e ciency is the order of 30 %instead of the 16 % illustred in [11]- [13].…”

Section: Cisselayer Optimizationmentioning

confidence: 82%

Improvement of CISSe / CdS / ZnO Structure Performance by SCAPS-1D.

Lachhab

Bliya

Ibrahmi

et al. 2021

Preprint

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This manuscript presents an optimization of the performances of the CISSe/CdS/ZnO structure. 12 tests were performed for each layer on thickness, gap energy and temperature using SCAPC-1D. Numerical data were compiled with the open circuit voltage, the short circuit density, the fill factor and the efficiency. The results obtained are confirmed with the measurements illustrated in the literature. The analyses indicate a progressive improvement in the performance of the structure for each test; an efficiency of 28.8 % was recorded for the CISSe layer while 30.07 % as an efficiency for CdS and 31.47 % for the absorbent layer. On the other hand, an open circuit voltage does not exceed 1.37V for the whole structure.Thus, these results are satisfied and encouraged.

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Section: Cisselayer Optimizationmentioning

confidence: 82%

Improvement of CISSe / CdS / ZnO Structure Performance by SCAPS-1D.

Lachhab

Bliya

Ibrahmi

et al. 2021

Preprint

View full text Add to dashboard Cite

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“…Wen et al. [ 37 ] and F. Pattini et al [ 38 ] have pointed out that the angle between (Sb 4 Se 6 ) n ribbons and the surface normal of (041), (231), (061), (141), (211), and (221) are 53.4°, 50.8°, 63.6°, 54,2°, 37.3°, and 43.8°, respectively. Hence, the ribbon carrier transport ( RCT ) values of each plane can be calculated by multiplying the TC values and effective vertical component ( EVC ) of each plane, [ 38 ] which can be used to clarify the contributions of the effective vertical component of the reflections.…”

Section: Resultsmentioning

confidence: 99%

“…[35][36] In addition, the induction of SbCl 3 treatment may induce the unsaturated atoms (either Sb or Se atoms) at the end of (Sb 4 Se 6 ) n ribbons to bond with the substrate with more perpendicular direction due to the lower surface formation energy of (041), (061), and (141) planes. Wen et al [37] and F. Pattini et al [38] have pointed out that the angle between (Sb 4 Se 6 ) n ribbons and the surface normal of (041), ( 231), ( 061), ( 141), (211), and (221) are 53.4°, 50.8°, 63.6°, 54,2°, 37.3°, and 43.8°, respectively. Hence, the ribbon carrier transport (RCT) values of each plane can be calculated by multiplying the TC values and effective vertical component (EVC) of each plane, [38] which can be used to clarify the contributions of the effective vertical component of the reflections.…”

Section: Resultsmentioning

confidence: 99%

Interface Modification Uncovers the Potential Application of SnO₂/TiO₂ Double Electron Transport Layer in Efficient Cadmium‐Free Sb₂Se₃ Devices

Wang

Yao

Dong

et al. 2022

Adv Materials Inter

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An undesirable p–n heterojunction interface of Sb2Se3 absorber with Cd‐free electron transport layer (ETL) is one of the key problems hindering the efficiency improvement of Sb2Se3 solar cell. Herein, a promising SnO2/TiO2 ETL coupled with SbCl3 treatment is introduced to improve the performance of Sb2Se3 solar cell. The mechanism of SbCl3 treatment on the crystal orientation of Sb2Se3 thin film and the p–n heterojunction interface of Sb2Se3 solar cell is disclosed combined with different characterization methods. The carrier transport property for Sb2Se3 thin film is enhanced, and the conduction band offset (CBO) of TiO2/Sb2Se3 interface is reduced from 0.57 to 0.20 eV by forming Sb2O3 interlayer at TiO2/Sb2Se3 interface after SbCl3 treatment, by which the interface recombination and the open circuit voltage deficit of the device can be effectively decreased, and the interface bonding at TiO2/Sb2Se3 interface can be effectively improved. Ultimately, the Cd‐free Sb2Se3 solar cell with configuration of ITO/SnO2/TiO2/Sb2Se3/Au achieves an efficiency of 5.82%, which is the highest efficiency in vapor transport deposition (VTD)‐processed Cd‐free Sb2Se3 solar cell at present. This work is expected to fill in the blank of VTD‐processed Cd‐free Sb2Se3 solar cell and offers a valuable reference for future band alignment of Sb2Se3 solar cell.

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“…In addition, the <400 °C fabrication temperature makes it possible for Sb 2 Se 3 to be deposited onto metal foil and even organic polymer substrates. [66] Recently, flexible Sb 2 Se 3 solar cells have been fabricated on Mo foils or polyimides, [66][67][68] and the devices presented superior bending stability and lightweight property. An impressive efficiency of 6.13% and powerper-weight of 2.04 W g À1 was fulfilled.…”

Section: Potential Application Of Sb 2 Se 3 Solar Cellsmentioning

confidence: 99%

Ten Years of Sb₂Se₃ Thin Film Solar Cells

Chen

Tang

2022

Solar RRL

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Antimony selenide (Sb2Se3) has emerged as a promising absorber material for photovoltaic application. Since the first pure‐phase Sb2Se3 solar cell reported ten years ago, increasing research has been carried out on this system with the device efficiency now reaching 9.2%. This work aims to present the major milestones of Sb2Se3 thin film solar cells from its birth to the present, including the selection of Sb2Se3 for thin film photovoltaics, the choice of planar device configuration instead of sensitized device, switching from solution processing to vacuum processing, new concept of orientation control and benign grain boundaries, discovery of unusual and complex defects, and post selenization for defect passivation. In the end, the authors discuss the competitive applications of Sb2Se3 solar cells in flexible devices and outlook their future development.

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Efficient and stable flexible Sb2Se3 thin film solar cells enabled by an epitaxial CdS buffer layer

Cited by 33 publications

References 41 publications

Improvement of CISSe / CdS / ZnO Structure Performance by SCAPS-1D.

Improvement of CISSe / CdS / ZnO Structure Performance by SCAPS-1D.

Interface Modification Uncovers the Potential Application of SnO₂/TiO₂ Double Electron Transport Layer in Efficient Cadmium‐Free Sb₂Se₃ Devices

Ten Years of Sb₂Se₃ Thin Film Solar Cells

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Efficient and stable flexible Sb2Se3 thin film solar cells enabled by an epitaxial CdS buffer layer

Cited by 33 publications

References 41 publications

Improvement of CISSe / CdS / ZnO Structure Performance by SCAPS-1D.

Improvement of CISSe / CdS / ZnO Structure Performance by SCAPS-1D.

Interface Modification Uncovers the Potential Application of SnO2/TiO2 Double Electron Transport Layer in Efficient Cadmium‐Free Sb2Se3 Devices

Ten Years of Sb2Se3 Thin Film Solar Cells

Contact Info

Product

Resources

About

Interface Modification Uncovers the Potential Application of SnO₂/TiO₂ Double Electron Transport Layer in Efficient Cadmium‐Free Sb₂Se₃ Devices

Ten Years of Sb₂Se₃ Thin Film Solar Cells