Summary Abstract: Low-temperature electrical transport studies of the two-dimensional electron gas at p-InSb interfaces

Interfacial layer formation of the CdTe/InSb heterointerfaces grown by temperature gradient vapor transport deposition

“…[8][9][10] A CdTe/InSb heterostructure is of particular interest due to the almost perfect lattice match ͑⌬a/a Х0.04% at 25°C͒ and the many promising electronic applications. [8][9][10][11][12][13][14][15] The considerable interest in the growth of high-quality CdTe films is also important because of its use as a buffer layer for the epitaxial layers of Hg 1Ϫx Cd x Te for infrared detectors. 15 Although some works concerning CdTe/ InSb heterostructures have been reported, [10][11][12][13][14][15] most structures were grown by MBE and MOCVD.…”

“…[8][9][10][11][12][13][14][15] The considerable interest in the growth of high-quality CdTe films is also important because of its use as a buffer layer for the epitaxial layers of Hg 1Ϫx Cd x Te for infrared detectors. 15 Although some works concerning CdTe/ InSb heterostructures have been reported, [10][11][12][13][14][15] most structures were grown by MBE and MOCVD. [10][11][12][13][14] Recently, the growth of CdTe/InSb heterostructures via a simple technique with simple equipment was reported by Kim et al 10,13,14 Further, until now, attempts to clearly demonstrate the existence of a high mobility two-dimensional electron gas ͑2DEG͒ at the CdTe/InSb heterointerface have not succeeded due to interface problems.…”

“…15 Although some works concerning CdTe/ InSb heterostructures have been reported, [10][11][12][13][14][15] most structures were grown by MBE and MOCVD. [10][11][12][13][14] Recently, the growth of CdTe/InSb heterostructures via a simple technique with simple equipment was reported by Kim et al 10,13,14 Further, until now, attempts to clearly demonstrate the existence of a high mobility two-dimensional electron gas ͑2DEG͒ at the CdTe/InSb heterointerface have not succeeded due to interface problems. 11 The failure to obtain a high mobility 2DEG was thought to be a significant problem at those heterointerfaces.…”

“…[10][11][12][13][14] Recently, the growth of CdTe/InSb heterostructures via a simple technique with simple equipment was reported by Kim et al 10,13,14 Further, until now, attempts to clearly demonstrate the existence of a high mobility two-dimensional electron gas ͑2DEG͒ at the CdTe/InSb heterointerface have not succeeded due to interface problems. 11 The failure to obtain a high mobility 2DEG was thought to be a significant problem at those heterointerfaces. 11 CdTe/InSb interface reactions led to the formation of interfacial layers, and these interfacial layers were found to be rich in indium and tellurium.…”

“…11 The failure to obtain a high mobility 2DEG was thought to be a significant problem at those heterointerfaces. 11 CdTe/InSb interface reactions led to the formation of interfacial layers, and these interfacial layers were found to be rich in indium and tellurium. 16 -18 Substantial components investigated by soft x-ray photoelectron, Raman spectroscopy, and Auger electron spectroscopy ͑AES͒ indicated that these interfacial layers might be In 2 Te 3 .…”