Sulphur passivation of gallium antimonide surfaces

Abstract

Improvement in optical and electrical properties were observed after sulphur passivation of gallium antimonide surface. Enhancement of photoluminescence intensity up to 60 times, reduction in surface state density by two orders of magnitude, and reverse leakage currents by a factor of 20–30 were obtained as a result of surface passivation. While the reduction of surface recombination is attained, the surface is not unpinned.

Characterization of GaSb nanowires grown by MOVPE

“…The intensity of the luminescence is rather low, but the peak has a FWHM of around 8 meV, which is good compared to recently reported values for GaAs/AlGaAs core-shell nanowires (25 meV) [9]. The luminescence could possibly be improved by passivating the surface with sulphur, as has been reported by Dutta et al [10] for bulk GaSb.…”

Surface State Engineering of Metal/MoS2Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability

“…Surface preparation has a long history in semiconductors and is reviewed in the reference [30]. We choose Sulfur Treatment owing to two primary considerations: first, the compatibility of Sulfur with the chemistry of MoS 2 and second, a historically large success rate in creating better contacts through Sulfur Passivation in several semiconductors like Germanium [31][32][33], Silicon [34,35] and other compound semiconductors [36]. In order to preserve the metal-semiconductor interface we select two high work function metals Nickel (5.0 eV) and Palladium (5.6eV) [24] which do not react with MoS 2 and are not prone to oxidation during deposition.…”

Plasma-assisted oxide removal from p-type GaSb for low resistivity ohmic contacts

“…16 . However, the presence of a thin oxide or sulfur passivation layer on the semiconductor surface after these pre-treatments leads to poor adhesion of the metal contacts.…”