1959
DOI: 10.1103/physrev.113.40
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Sulfur Vacancy Mechanism in Pure CdS

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Cited by 60 publications
(23 citation statements)
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“…These photo-generated trapped electrons recombine with holes in the valence band, leading to an emission at 670 nm. Based on this PL data, the sulfur vacancy is located nearly ~0.7 eV below the conduction band in the CdS nanorods, which is comparable with the values reported for bulk CdS [25,26]. Deposition of Au nanocrystals on S 2 rich CdS severely quenched the PL intensity from the CdS nanorods (Fig.…”
Section: Photoluminescence and Charge Separationsupporting
confidence: 77%
“…These photo-generated trapped electrons recombine with holes in the valence band, leading to an emission at 670 nm. Based on this PL data, the sulfur vacancy is located nearly ~0.7 eV below the conduction band in the CdS nanorods, which is comparable with the values reported for bulk CdS [25,26]. Deposition of Au nanocrystals on S 2 rich CdS severely quenched the PL intensity from the CdS nanorods (Fig.…”
Section: Photoluminescence and Charge Separationsupporting
confidence: 77%
“…The spectra show two main features-a bandedge luminescence peak at 2.44 eV with FWHM of 0.11 eV, and a broad sub-bandgap emission from 1.65 to 2.18 eV. The sub-bandgap emission is attributed to S vacancies, [32] which is a common feature of CdS, including high quality single crystal material. The oscillatory substructure observed within the broad sub-bandgap region is associated with thin film optical effects.…”
mentioning
confidence: 98%
“…This feature is also present in most PL spectra from CdS QDs previously reported [11,12,[16][17][18]. It could be associated to midgap surface states generally attributed to sulphur vacancies [17,[19][20][21]. Compared to near band edge emission, the intensity of this PL band is weaker for samples obtained by the MW synthetic route than for those grown by single source precursor methodology.…”
Section: Resultsmentioning
confidence: 77%