Sulfur-passivation mechanism analysis of GaInAsSb photodetectors

Li, Zhihuai; Guanqun, Xia; Wu, Binhe; Huang, Weilai; Cheng, Zhen

doi:10.1063/1.1586960

Cited by 10 publications

(8 citation statements)

References 11 publications

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“…In Figure S5b, S 2s peaks (226.1 eV) can be found in both S-GaSb NWs with S 3.3% and 6.6% samples. The XPS analysis is focused on typical Ga 3s, Ga 3d, and Sb 4d spectra, which are commonly studied in the literature. ,,, In Figure a–c, the black curve is pure GaSb NWs (without S), the blue curve is S-GaSb NWs with S 3.3%, and the red curve is S-GaSb NWs with S 6.6%. As can be seen from Figure a of the Ga 3s spectra, the Ga 3s (160.8 eV) peak is found in the pure GaSb NWs, , while the peaks of S-GaSb NWs shift to higher binding energy value, which may be due to the S incorporation.…”

Section: Results and Discussionmentioning

confidence: 99%

“…The XPS analysis is focused on typical Ga 3s, Ga 3d, and Sb 4d spectra, which are commonly studied in the literature. ,,, In Figure a–c, the black curve is pure GaSb NWs (without S), the blue curve is S-GaSb NWs with S 3.3%, and the red curve is S-GaSb NWs with S 6.6%. As can be seen from Figure a of the Ga 3s spectra, the Ga 3s (160.8 eV) peak is found in the pure GaSb NWs, , while the peaks of S-GaSb NWs shift to higher binding energy value, which may be due to the S incorporation. In Figure b of Ga 3d, the same peaks of Ga–Sb (18.7 eV) bonding and Ga–O (20.3 eV) bonding are found in all of the pure GaSb NWs and S-GaSb NWs through the Gauss–Lorentz fitting.…”

Section: Results and Discussionmentioning

confidence: 99%

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Near-Infrared Polarimetric Image Sensors Based on Ordered Sulfur-Passivation GaSb Nanowire Arrays

et al. 2022

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The near-infrared polarimetric image sensor has a wide range of applications in the military and civilian fields, thus developing into a research hotspot in recent years. Because of their distinguishing 1D structure features, the ordered GaSb nanowire (NW) arrays possess potential applications for near-infrared polarization photodetection. In this work, single-crystalline GaSb NWs are synthesized through a sulfur-catalyzed chemical vapor deposition process. A sulfur-passivation thin layer is formed on the NW surface, which prevents the GaSb NW core from being oxidized. The photodetector based on sulfur-passivation GaSb (S-GaSb) NWs has a lower dark current and higher responsivity than that built with pure GaSb NWs. The photodetector exhibits a large responsivity of 9.39 × 102 A/W and an ultrahigh detectivity of 1.10 × 1011 Jones for 1.55 μm incident light. Furthermore, the dichroic ratio of the device is measured to reach 2.65 for polarized 1.55 μm light. Through a COMSOL simulation, it is elucidated that the origin of the polarized photoresponse is the attenuation of a light electric field inside the NW when the angle of incident polarization light rotates. Moreover, a flexible polarimetric image sensor with 5 × 5 pixels is successfully constructed on the ordered S-GaSb NW arrays, and it exhibits a good imaging ability for incident near-infrared polarization light. These good photoresponse properties and polarized imaging abilities can empower ordered S-GaSb NW arrays with technological potentials in next-generation large-scale near-infrared polarimetric imaging sensors.

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Section: Results and Discussionmentioning

confidence: 99%

Section: Results and Discussionmentioning

confidence: 99%

Near-Infrared Polarimetric Image Sensors Based on Ordered Sulfur-Passivation GaSb Nanowire Arrays

et al. 2022

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“…42 Lastly a stable chemical bonding can be formed between Sb atom and S atom, which will facilitate the adsorption of LiPSs to Sb material. 43 In this work, we developed an-air stable SbNs-modied separator for Li-S batteries with excellent electrochemical performance. This was fullled by rstly fabricating SbNs by a sonication-assisted liquid exfoliation method.…”

Section: Introductionmentioning

confidence: 99%

“… 42 Lastly a stable chemical bonding can be formed between Sb atom and S atom, which will facilitate the adsorption of LiPSs to Sb material. 43 …”

Section: Introductionmentioning

confidence: 99%

Sb nanosheet modified separator for Li–S batteries with excellent electrochemical performance

et al. 2021

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“…To overcome these problems, a procedure involving removal of native oxides and fabrication of passivating coating is necessary. In search for appropriate passivating coatings, the surface treatment in sulphur containing solutions has recently received much attention These involved the use of 21 %(NH 4 ) 2 S-H 2 O, 16% Na 2 S-C 3 H 7 OH and 16% (NH 2 ) 2 CS-C 3 H 7 OH solutions resulting in prominent improvement of the device performance [6][7][8][9]. While a number of studies have been performed in order to understand the mechanism of sulphur passivation of GaSb surface [10][11][12][13][14], little is known on the physicochemical properties of the surface of quaternary materials under sulphur treatment.…”

Section: Introductionmentioning

confidence: 99%

Sulphur passivation of GaSb, InGaAsSb and AlGaAsSb surfaces

Papis

Piotrowska

Kamińska

et al. 2007

Phys. Status Solidi (c)

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The effects of electrochemical treatment in either 21%(NH 4 ) 2 S-H 2 O or 16%Na 2 S-C 3 H 7 OH solutions on the surface properties of GaSb, In 0.23 Ga 77 As 0.18 Sb 0.82 and Al 0.34 Ga 0.66 As 0.025 Sb 0.975 have been investigated by complementary use of Variable Angle Spectroscopic Ellipsometry (VASE) and X-ray Photoelectron Spectroscopy (XPS). We have shown that electrochemical sulphuration enables to produce 94-350 nm thick insulating overcoats with good surface morphology. The main components of the passivating layers are Ga 2 S 3 and Sb 2 S 5 when formed on GaSb, while additional components of In 2 S 3 , admixture of Al 2 O 3 and appearance of Al-As bond were observed on InGaAsSb and AlGaAsSb , respectively. The main feature distinguishing the effect of electrochemical treatment in Na 2 S-C 3 H 7 OH when comparing to those in (NH 4 ) 2 S-H 2 O is that passivating layers contain additional components of Na 2 SO 3 and/or Na 2 SO 4 .

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Sulfur-passivation mechanism analysis of GaInAsSb photodetectors

Cited by 10 publications

References 11 publications

Near-Infrared Polarimetric Image Sensors Based on Ordered Sulfur-Passivation GaSb Nanowire Arrays

Near-Infrared Polarimetric Image Sensors Based on Ordered Sulfur-Passivation GaSb Nanowire Arrays

Sb nanosheet modified separator for Li–S batteries with excellent electrochemical performance

Sulphur passivation of GaSb, InGaAsSb and AlGaAsSb surfaces

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