Near-Infrared Polarimetric Image Sensors Based on Ordered Sulfur-Passivation GaSb Nanowire Arrays

Abstract

The near-infrared polarimetric image sensor has a wide range of applications in the military and civilian fields, thus developing into a research hotspot in recent years. Because of their distinguishing 1D structure features, the ordered GaSb nanowire (NW) arrays possess potential applications for near-infrared polarization photodetection. In this work, single-crystalline GaSb NWs are synthesized through a sulfur-catalyzed chemical vapor deposition process. A sulfur-passivation thin layer is formed on the NW surface, which prevents the GaSb NW core from being oxidized. The photodetector based on sulfur-passivation GaSb (S-GaSb) NWs has a lower dark current and higher responsivity than that built with pure GaSb NWs. The photodetector exhibits a large responsivity of 9.39 × 102 A/W and an ultrahigh detectivity of 1.10 × 1011 Jones for 1.55 μm incident light. Furthermore, the dichroic ratio of the device is measured to reach 2.65 for polarized 1.55 μm light. Through a COMSOL simulation, it is elucidated that the origin of the polarized photoresponse is the attenuation of a light electric field inside the NW when the angle of incident polarization light rotates. Moreover, a flexible polarimetric image sensor with 5 × 5 pixels is successfully constructed on the ordered S-GaSb NW arrays, and it exhibits a good imaging ability for incident near-infrared polarization light. These good photoresponse properties and polarized imaging abilities can empower ordered S-GaSb NW arrays with technological potentials in next-generation large-scale near-infrared polarimetric imaging sensors.

Precisely Tailoring a FAPbI3-Derived Ferroelectric for Sensitive Self-Driven Broad-Spectrum Polarized Photodetection

“…One of the most obvious additional pieces of evidence is that I sc exhibited a temperature dependence, which sharply decreased near T c , and completely disappeared in HTP (Figure 2d). This trend reveals the close relationship between BPVE and ferroelectricity, which has been confirmed by BiFeO 3 , 20 tetrathiafulvalene-p-chloranil, 4 1 and (ethylammonium) 4 Pb 3 Br 10 . 42 These results indicate that 2D hybrid perovskite ferroelectrics can be designed to take advantage of their intrinsic BPVE to power polarized light detection.…”

“…High-performance polarized photodetectors have a wide range of practical applications in military and civic domains, including fire detection, medical-biological imaging, remote sensing, and night vision. − Recently, polarized photodetectors have been developed toward highly integrated devices, and using semiconductor materials with polarized light sensitivity as the working medium is a direct technique to achieve high integration. , To date, 2D inorganic materials, such as GeSe, GeP, and SiP 2 , have dominated polarized photodetectors due to their intrinsic feature of linear dichroism. However, the devices mentioned above are limited by the anisotropic absorption of the materials’ internal structure, and required an external electric bias as a driving force to separate the photogenerated carriers.…”

Sulfur-Passivated InSb Nanowires for Infrared Photodetectors

“…Therefore, the field-effect electron mobility, μ e , of the S-InSb NW-based FET can be acquired using the following equations ,,− C normali ≈ 2 π ε o ε r L In ( 2 h / r ) μ normale = g normalm L 2 false( V normald C normali false) where C i is defined as the back-gate capacitance, ε 0 is the vacuum dielectric constant (ε 0 = 8.85 × 10 –12 F m –2 ), ε r is the relative dielectric constant of SiO 2 (ε r = 3.9), h is the thickness of the SiO 2 dielectric layer (300 nm), L is the S-InSb NW length in the channel (5 μm), and r is the radius of the NW (40.5 nm). The calculated μ e is shown in Figure e, and the peak value of 366.25 cm 2 V –1 s –1 was recognized as the field-effect mobility. , To understand the overall transport performances of our prepared S-InSb NWs, the field-effect mobilities of 30 individual S-InSb NW-based FET devices were randomly counted and the results are shown in Figure f. The normal distribution of these field-effect mobilities was 365.71 ± 199.19 cm 2 V –1 s –1 , and the maximum value was 823.62 cm 2 V –1 s –1 .…”

“…To date, the S-catalyzed CVD method has been applied successfully to the growth of high-quality III–V NWs, such as GaSb NWs, GaAs NWs, and GaAs x Sb 1– x , where amorphous sulfides are formed in the NW shell, and S is not doped into the NW core. ,, Consequently, S, used as a growth catalyst and a growth surface passivator, prevents the oxidation of elements inside the NW core. In this experiment, the S-passivated InSb NWs were synthesized through a typical vapor–liquid–solid (VLS) mechanism in CVD equipment, as illustrated in Figures a,b and S1.…”

GaAs Nanowire Photodetectors Based on Au Nanoparticles Modification

“…Photodetectors employing advanced material systems and device designs have attracted significant attention, from the original photovoltaic effect to current intelligent optoelectronic sensors [ 1 , 2 , 3 , 4 , 5 , 6 , 7 ]. Under the requirement for miniaturization of optoelectronic devices, GaAs nanowires stand out because of their higher carrier mobility and absorption coefficients compared with traditional low-dimensional materials [ 8 , 9 ].…”