Sulfur and low-temperature SiNx passivation of self-aligned graded-base InGaAs/InP heterostructure bipolar transistors

Abstract

Comparison of the passivation effects on self-and non-self-aligned InP/InGaAs/InP double heterostructure bipolar transistors by low-temperature deposited SiN x Base metallization stability in InP/InGaAs heterojunction bipolar transistors and its influence on leakage currentsThe passivation of self-aligned InGaAs/InP heterostructure bipolar transistors ͑HBTs͒ with graded base by the combination of S and low-temperature deposited SiN x was investigated. Base current was found to decrease after the passivation. Collector current significantly increases at low base-emitter voltages. The increase is attributed to the leakage current of the base-collector diode. The current gain was found to increase. When annealing was performed at 300°C for 5 min, the base current decreases further and the collector current decreases. The leakage of collector current was found to be suppressed. The current gain was further improved and the leakage current can affect the Gummel plots. The leakage source was identified to be the interface between the semiconductor and the SiN x layer. The leakage current can be decreased by the annealing process.

Photoluminescence model of sulfur passivated p-InP nanowires

“…Similar stability was previously measured for GaAs nanowires [6]. However, the stability of the S passivation can be improved by encapsulation in polymer or dielectrics [35][36][37].…”

Direct Determination of Minority Carrier Diffusion Lengths at Axial GaAs Nanowire p–n Junctions

“…A measurement directly after the passivation was not possible for us, but should clearly reveal a much stronger effect. Permanently stable alternatives are given by the combined (NH 4 ) 2 S/SiN or (NH 4 ) 2 S/BCB passivations. Besides, there are no standard processing parameters for ammonium sulfide passivation of GaAs nanowires and further improvement can be expected by process optimization.…”

Модификация Атомной И Электронной Структуры Поверхности Полупроводников А-=sup=-Iii-=/Sup=-В-=sup=-v-=/Sup=- На Границе С Растворами Электролитов О Б З Ор

“…Однако свойства химически обработанной поверхности деградировали при выдержке на воздухе. Для стабилизации свойств химически пассивированного транзистора было предложено защитить его тонким слоем SiN x , осаждаемым при комнатной температуре [348]. Кроме того, благодаря пассивации водным раствором сульфида аммония удалось существенно улучшить высокочастотные характеристики транзистора InGaP/GaAs, а также обеспечить возможность его работы в условиях сверхмалых токов коллектора ( 10 −9 А) с достаточным коэффициентом усиления (> 10) [349].…”