Successful natural stress-induced separation of hydride vapor phase epitaxy-grown GaN layers on sapphire substrates

Yamane, Keisuke; Ueno, Masaki; Furuya, Hiroshi; Okada, Narihito; Tadatomo, Kazuyuki

doi:10.1016/j.jcrysgro.2012.07.038

Cited by 43 publications

(27 citation statements)

References 21 publications

(23 reference statements)

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“…The radius of curvature was taken from the results obtained by the shift in the peak top angle of the 0002 GaN XRCs. It was found that the radius of curvature of the SSG GaN template decreased with increasing sample thickness in accordance with the stresses caused by the thermal strain present in semiconductor multilayer structures , and we have previously evaluated the radius of curvature in detail . The radius of curvature of the ADSG GaN template was very large compared with that of the SSG GaN template of the same thickness.…”

Section: Resultsmentioning

confidence: 55%

Alternately double‐sided growth of low‐curvature GaN templates on sapphire substrates using hydride vapor phase epitaxy

Okada

Ihara

Yamane

et al. 2016

Physica Status Solidi (b)

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GaN layers have been grown on double‐side‐polished sapphire substrates using hydride vapor phase epitaxy. The GaN layers on each side of the substrate were alternately grown using a new susceptor with a rotating mechanism. Although a conventional GaN layer grown on one side of a sapphire substrate exhibits a small radius of curvature, the alternately double‐sided‐grown GaN template exhibits a large radius of curvature. The radius of curvature of the alternately double‐sided‐grown GaN template with a thickness of 180 μm was found to be approximately 16.4 m, and was larger than the 0.5 m radius of curvature of the conventional GaN template.

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Section: Resultsmentioning

confidence: 55%

Alternately double‐sided growth of low‐curvature GaN templates on sapphire substrates using hydride vapor phase epitaxy

Okada

Ihara

Yamane

et al. 2016

Physica Status Solidi (b)

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“…The overall dislocation density can be described using the following equation :

Fit : ρ = \frac{1}{2 K {(h - h_{0})}^{n} + \frac{1}{ρ_{0}}},

where h , h 0 , and ρ 0 are growth thickness, thickness of the initial substrate, and dislocation density at h 0 , respectively. The thickness dependence for {20–21} GaN on {22–43} PSS and for + c ‐GaN on c ‐sapphire are described well by the fitting curves with K = 4 and 100 nm, respectively . The value of n is set to 0.67 for both fitting curves.…”

Section: Resultsmentioning

confidence: 98%

Growth of semipolar {20–21} GaN and {20–2–1} GaN for GaN substrate

Hashimoto

Yamane

Okada

et al. 2015

Physica Status Solidi (b)

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In this article, we present a semipolar {20–21} GaN layer and {20–2–1} GaN layer for large GaN substrates. The {20–21} GaN layer was fabricated on {22–43} patterned sapphire substrates (PSSs) by metal‐organic vapor‐phase epitaxy (MOVPE) and hydride vapor‐phase epitaxy (HVPE). We found that the surface roughening and crack generation during the HVPE growth were suppressed by the formation of SiO2‐striped masks parallel to the c‐axis on the MOVPE‐grown {20–21} GaN template. Furthermore, we demonstrated millimeter‐thick crystal growth on a {20–21} GaN layer and a {20–2–1} GaN layer on a GaN substrate using HVPE. The dark‐spot density in the {20–2–1} GaN layer was approximately 9.6 × 106 cm−2 for 960 min growth. The dark‐spot density in the {20–2–1} GaN layer decreased more rapidly than that in the {20–21} GaN layer as growth thickness increased.

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“…An important step in this technology is the separation of the bulk GaN layer from the substrate after the growth process. Thick GaN layers with thicknesses of several hundred microns typically separate from sapphire substrates during the cooling after the growth, but this self-separation process is accompanied by cracking of the GaN layer [1][2][3]. The cracking of a GaN layer can be suppressed by growing a bulk GaN layer with a thickness of several millimeters, or by reducing the bonding energy between a substrate and a GaN layer.…”

Section: Introductionmentioning

confidence: 99%

Free-standing 2-inch bulk GaN crystal fabrication by HVPE using a carbon buffer layer

Voronenkov

Leonidov

Bochkareva

et al. 2019

J. Phys.: Conf. Ser.

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A free-standing bulk gallium nitride layer with a thickness of 365 µm and a diameter of 50 mm was obtained by hydride vapor phase epitaxy on a sapphire substrate with a carbon buffer layer. The carbon buffer layer was deposited by thermal decomposition of methane in situ in the same process with the growth of a bulk GaN layer. The bulk GaN layer grown on the carbon buffer layer self-separated from the sapphire substrate during the cooling after the growth. The dislocation density was 8 · 10 6 cm −2 . The (0002) X-Ray rocking curve full width at half maximum was 164 arcsec. arXiv:1902.04672v2 [physics.app-ph] 17 Apr 2019 V. Voronenkov et al 2019

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Successful natural stress-induced separation of hydride vapor phase epitaxy-grown GaN layers on sapphire substrates

Cited by 43 publications

References 21 publications

Alternately double‐sided growth of low‐curvature GaN templates on sapphire substrates using hydride vapor phase epitaxy

Alternately double‐sided growth of low‐curvature GaN templates on sapphire substrates using hydride vapor phase epitaxy

Growth of semipolar {20–21} GaN and {20–2–1} GaN for GaN substrate

Free-standing 2-inch bulk GaN crystal fabrication by HVPE using a carbon buffer layer

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